Current and field induced domain wall creep in Ta/CoFeB/MgO/Ta wire

Samik Duttagupta

Presentation information

Oral presentation

10. Spintronics and Magnetics » 10.2 Spin torque, spin current, circuits, and measurement technologies

[20a-S2-1~12] 10.2 Spin torque, spin current, circuits, and measurement technologies

Sat. Sep 20, 2014 9:00 AM - 12:00 PM S2 (S2)

9:15 AM - 9:30 AM

▼ [20a-S2-2] Current and field induced domain wall creep in Ta/CoFeB/MgO/Ta wire

^〇Samik Duttagupta¹, Shunsuke Fukami^2,3, Michihiko Yamanouchi^1,2, Chao Ling Zhang¹, Hideo Sato^2,3, Fumihiro Matsukura^1,2,4, Hideo Ohno^1,2,3,4 (Laboratoty for Nanoelectronics and Spintronics, RIEC, Tohoku University¹, CSIS, Tohoku University², CIES, Tohoku University³, WPI-AIMR, Tohoku University⁴)

Keywords:MRAM (including circuit and device designs)