Session information

Oral presentation

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

[17a-E11-6~10] 15.3 III-V-group epitaxial crystals

Mon. Mar 17, 2014 10:30 AM - 11:45 AM E11 (E205)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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10:30 AM - 10:45 AM

[17a-E11-6] In situ XRD observation during modulated capping of InAs quantum dots

^○Kenichi Shimomura¹, Hidetoshi Suzuki², Takuo Sasaki³, Masamitu Takahasi³, Yoshio Ohshita¹, Itaru Kamiya¹ (Toyota Tech. Inst.¹, IRO, Univ. Miyazaki², JAEA³)

10:45 AM - 11:00 AM

[17a-E11-7] Growth of metamorphic InGaAs on GaAs(111)A using thin InAs layer

^○Takaaki Mano¹, Neul Ha^1,2, Kazutaka Mitsuishi¹, Takashi Kuroda^1,2, Akihiro Ohtake¹, Andrea Castellano^1,3, Stefano Sanguinetti³, Takeshi noda¹, Yoshiki Sakuma¹, Kazuaki Sakoda¹ (NIMS¹, Kyushu Univ.², Univ. Milano Bicocca³)

11:00 AM - 11:15 AM

[17a-E11-8] Variation of Lattice Constant at the Formation of Nitrogen delta-doped Layer on GaAs(001)

Norihisa Nishimoto¹, Masahiko Kondow¹, ^○Fumitaro Ishikawa² (Osaka Univ.¹, Ehime Univ.²)

11:15 AM - 11:30 AM

[17a-E11-9] Reduction of wafer curvature after growth using thin metamorphic buffer by in-situ wafer-curvature measurement

^○Ryo Nakao¹, Masakazu Arai¹, Ryuzo Iga¹, Masaki Kohtoku¹ (NTT Photonics Laboratories¹)

11:30 AM - 11:45 AM

[17a-E11-10] Strained InGaP/InGaP MQW grown on misoriented GaAs (100) substrate by MOMBE

^○Manabu Mitsuhara¹, Noriyuki Watanabe¹, Haruki Yokoyama¹, Naoteru Shigekawa² (NTT Photonics Labs.¹, Osaka City Univ.²)

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