[17a-E13-1~11] 15.4 III-V-group nitride crystals

Mon. Mar 17, 2014 9:00 AM - 12:00 PM E13 (E301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[17a-E13-1] Fabrication of InGaN µ-LED arrays and evaluation of electrical and luminescence properties

^○Kazuaki Tsuchiyama¹, Hiroto Sekiguchi¹, Hiroyuki Tahara¹, Hiroshi Okada², Akihiro Wakahara¹ (Toyohashi Univ. Tech.¹, EIIRIS²)

9:15 AM - 9:30 AM

[17a-E13-2] The effect of Sub-Wavelength-Grating profile on LED polarization characteristics

^○Ryo Shimizu¹, Yuusuke Takashima¹, Yoshiki Naoi^1,2 (ATS, Tokushima Univ.¹, STS, Tokushima Univ.²)

9:30 AM - 9:45 AM

[17a-E13-3] Fabrication of InGaN based plasmonic LED with thin p-type layer

^○Tetsurou Tsukada¹, Keisuke Yamane¹, Narihito Okada¹, Kazuyuki Tadatomo¹, Kazutaka Tateishi², Kouichi Okamoto² (Yamaguchi Univ.¹, Kyushu Univ.²)

9:45 AM - 10:00 AM

△ [17a-E13-4] Study of the high reflective Ag electrode on p-type GaN

^○（M1）Syunsuke Kawai¹, Daisuke Iida¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (Meijo Univ.¹, Akasaki Inst.²)

10:00 AM - 10:15 AM

△ [17a-E13-5] Evaluation of electron blocking layer in blue-LED by direct measurement of electron overflow

^○Kento Hayashi¹, Kenjo Matsui¹, Toshiki Yasuda¹, Shota Katsuno¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (Meijo Univ.¹, Akasaki Research center Nagoya Univ.²)

10:15 AM - 10:30 AM

△ [17a-E13-6] Investigation of hole injections in Ultra-Violet light emitting diodes by polarization engineering

^○Toshiki Yasuda¹, Kento Hayasi¹, Kenichirou Takeda¹, Tsubasa Nakashima¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2, Hiroshi Amano^2,3 (Fac. Sci. and Technol. Meijio Univ.¹, Akasaki Research Center, Nagoya Univ.², Grad. Sch. of Eng. Nagoya Univ.³)

Break 10:30〜10:45 (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

△ [17a-E13-7] Highly efficient LEDs on nitride-based tunnel junction

Takatoshi Morita¹, ^○Masataka Ino¹, Yuka Kuwano¹, Masahiro Watanabe¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (Meijo Univ.¹, ARC,Nagoya Univ.²)

11:00 AM - 11:15 AM

△ [17a-E13-8] Current confinement structures with buried nitride-based tunnel junctions

^○Yuka Kuwano¹, kousuke Horikawa¹, Takatoshi Morita¹, Masataka Ino¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (Fac. Sci. & Eng, Meijo Univ.¹, Akasaki Research Center, Nagoya Univ.²)

11:15 AM - 11:30 AM

[17a-E13-9] Improvement of light extraction efficiency of InGaN/AlGaN based LEDs with fractal patterned sapphire substrate

^○Kotaro Dai¹, Keiichi Kajita¹, Lingfeng Shen¹, Yasuhito Kajita¹, Kei Shinotsuka¹ (Oji Holdings Corp.¹)

11:30 AM - 11:45 AM

△ [17a-E13-10] Dislocation density dependence of GaInN/GaN heterostructure

^○（B）Koji Ishihara¹, yasunari Kondo¹, Hiroyuki Matsubara¹, Daisuke Iida¹, Taiji Yamamoto¹, Mihoko Sowa¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (Meijo Univ.¹, Akasaki Res. Cen., Nagoya Univ.²)

11:45 AM - 12:00 PM

△ [17a-E13-11] Suppression of Metastable-Phase Inclusion in MOVPE-Grown －c-plane InGaN/GaN Multiple Quantum Wells

^○Kanako Shojiki¹, Jung-Hun Choi^1,2, Takuya Iwabuchi¹, Noritaka Usami³, Tomoyuki Tanikawa^1,2, Shigeyuki Kuboya¹, Takashi Hanada^1,2, Ryuji Katayama^1,2, Takashi Matsuoka^1,2 (IMR, Tohoku Univ.¹, JST, CREST², Nagoya Univ.³)