Session information

Oral presentation

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

[17p-E11-1~15] 15.3 III-V-group epitaxial crystals

Mon. Mar 17, 2014 1:30 PM - 5:30 PM E11 (E205)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45〜13:30 (11:45 AM - 1:30 PM)

1:30 PM - 1:45 PM

△ [17p-E11-1] Growth of InAs/GaAs quantum dots using a growth suppression phenomenon and their optical properties

^○（D）Jinkwan Kwoen¹, Masahiro Kakuda², Katsuyuki Watanabe¹, Yasutomo Ota², Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (IIS, Univ. of Tokyo¹, NanoQuine, Univ. of Tokyo²)

1:45 PM - 2:00 PM

[17p-E11-2] Energy Distribution of State Density of an InAs Quantum Dot Layer

^○Takuya Hoshii¹, Yoshitaka Okada¹ (The Univ. of Tokyo, RCAST¹)

2:00 PM - 2:15 PM

[17p-E11-3] Long PL decay time of in-plane ultrahigh-density InAs QD layers

^○Shunsuke Uchida¹, Miyuki Shiokawa¹, Koichi Yamaguchi¹ (Univ. of Electro-Communications¹)

2:15 PM - 2:30 PM

[17p-E11-4] Photoluminescence properties of closely stacked InAs quantum-dots on self-formed GaAs nanoholes

^○Hiroyuki Yamashita¹, Yuta Takahashi¹, Koichi Yamaguchi¹ (Univ. of Electro-Communications¹)

2:30 PM - 2:45 PM

[17p-E11-5] Sub-threshold polarized optical gain of closely stacked InAs/GaAs quantum dots

^○Takaya Andachi¹, Masaya Suwa¹, Takuya Matsumura¹, Tomoyuki Ohashi¹, Takashi Kita¹ (Kobe Univ.¹)

2:45 PM - 3:00 PM

[17p-E11-6] Thermal carrier activation properties in InAs/Al_xGa_1-xAs quantum-dots

^○Shigeo Asahi¹, Haruyuki Teranishi¹, Naofumi Kasamatsu¹, Tomoyuki Kada¹, Toshiyuki Kaizu¹, Takashi Kita¹ (Kobe Univ.¹)

3:00 PM - 3:15 PM

[17p-E11-7] Self-formation of InAs quantum dots on nitrogen δ-doped GaAs(001)

^○Toshiyuki Kaizu^1,2, Kohei Taguchi², Takashi Kita² (CSREA, Kobe Univ.¹, Faculty of Eng., Kobe Univ.²)

3:15 PM - 3:30 PM

▼ [17p-E11-8] Formation of InAs quantum dots on InP(111)A by droplet epitaxy and their optical emission at 1.3μm and 1.55μm

^○Neul Ha^1,2, Xiangming Liu¹, Takaaki Mano¹, Takashi Kuroda^1,2, Kazutaka Mitsuishi¹, Takeshi Noda¹, Yoshiki Sakuma¹, Kazuaki Sakoda¹ (NIMS¹, Univ. Kyushu²)

Break 15:30〜15:45 (3:30 PM - 3:45 PM)

3:45 PM - 4:00 PM

[17p-E11-9] Molecular Beam Epitaxy of InAs dots on anodized InP substrates

^○Kuniyuki Yokobori¹, Taihei Iwasaki¹, Yoshitaka Morishita¹ (Tokyo Univ. of Agri & Tech¹)

4:00 PM - 4:15 PM

[17p-E11-10] SLD based on multiple InAs quantum dots for OCT light source

^○（M1）Takuma Yasuda¹, Hiroshi Shibata¹, Nobuhiko Ozaki¹, Shunsuke Ohkouchi², Naoki Ikeda³, Hirotaka Ohsato³, Eiichirou Watanabe³, Yoshimasa Sugimoto³, Richard Hogg⁴ (Wakayama Univ.¹, NEC Corp.², NIMS³, Univ. Sheffield⁴)

4:15 PM - 4:30 PM

[17p-E11-11] OCT imaging by using SLD based on InAs quantum dots

^○（M1）Hiroshi Shibata¹, Takuma Yasuda¹, Nobuhiko Ozaki¹, Shunsuke Ohkouchi², Naoki Ikeda³, Hirotaka Ohsato³, Eiichirou Watanabe³, Yoshimasa Sugimoto³, Richard Hogg⁴ (Wakayama Univ.¹, NEC Corp.², NIMS³, Univ. Sheffield⁴)

4:30 PM - 4:45 PM

▲ [17p-E11-12] Effect of Annealing of GaAs/Al(Ga)As Buffer Layer on the Photoluminescence Intensity of InAs/GaAs Quantum Dots Grown on Ge/Si Substrate by MOCVD

^○（PC）Rajesh Mohan¹, Makoto Miura^2,3, Masao Nishioka¹, Yasuhiko Arakawa¹ (NanoQuine, Tokuo Univ¹, PETRA, Japan², PECST, Japan³)

4:45 PM - 5:00 PM

[17p-E11-13] Electronic states of epitaxial two-dimensional nitrogen atomic sheet in GaAs

^○Yukihiro Harada¹, Takeshi Baba¹, Takashi Kita¹ (Kobe Univ.¹)

5:00 PM - 5:15 PM

△ [17p-E11-14] Effectiveness of surface nitridation on growth of dilute nitride GaAsN alloys

^○Noriyuki Urakami¹, Hiroto Sekiguchi¹, Hiroshi Okada^2,1, Akihiro Wakahara¹ (Toyohashi Tech.¹, Toyohashi Tech.EIIRIS²)

5:15 PM - 5:30 PM

[17p-E11-15] Effect of crystal growth method on the microstructure of nitrogen-related localized state in GaAsN thin film

^○（D）Wen Ding¹, Goshi Morioka¹, Naoki Fujita¹, Akio Suzuki¹, Hidetoshi Suzuki¹, Atsuhiko Fukuyama¹, Masahito Yamaguchi², Tetso Ikari¹ (Univ. of Miyazaki¹, Toyota Technological Inst.²)

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