Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[17p-E13-1~18] 15.4 III-V-group nitride crystals

Mon. Mar 17, 2014 1:00 PM - 6:00 PM E13 (E301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

Lunch 12:00〜13:00 (12:00 PM - 1:00 PM)

1:00 PM - 1:15 PM

▲ [17p-E13-1] Phase separation of MOVPE-grown thick (〜1 µm) InxGa1-xN (x〜0.3) (I): Simultaneous emergence of metallic In-Ga and GaN-rich InGaN

^○Md.Tanvir Hasan^1,2, Akihiro Mihara^1,2, Norihiko Narita³, Naoteru Shigekawa⁴, Akio Yamamoto^1,2 (Univ. of Fukui¹, JST-CREST², The Kansai Electric Power Co.³, Osaka City Univ.⁴)

1:15 PM - 1:30 PM

▲ [17p-E13-2] Phase separation of MOVPE-grown thick (〜1 µm) InxGa1-xN(x〜0.3) (II) Suppression of the phase separation

^○Md.Tanvir Hasan^1,2, Akihiro Mihara^1,2, Norihiko Narita³, Naoteru Shigekawa⁴, Akio Yamamoto^1,2 (Univ. of Fukui¹, JST-CREST², The Kansai Electric Power Co.³, Osaka City Univ.⁴)

1:30 PM - 1:45 PM

[17p-E13-3] Simulation of III-V nitride solar cell with respect to strain effect

^○Masatomo Sumiya¹, Liwen Sang¹, Fumio Hasegawa², Yoshitaka Nakano² (NIMS¹, Chubu Univ.²)

1:45 PM - 2:00 PM

△ [17p-E13-4] Characterization of heterogeneity on GaInN films by fluorescence microscope and secondary ion mass spectrometry

^○Naoki Toyomitsu¹, Liwen Sang², Tomohiro Yamaguchi¹, Tohru Honda¹, Masatomo Sumiya² (Kogakuin Univ.¹, NIMS.²)

2:00 PM - 2:15 PM

[17p-E13-5] Development of MOVPE Process for SMART Solar Cell by Spectroscopic Ellipsometory

^○Kazuhide Kusakabe^1,2,3, Ke Wang^1,2,3, Naoki Hashimoto^1,2,3, Akihiko Yoshikawa^1,2,3,4 (C-SGIR, Chiba Univ.¹, VBL, Chiba Univ.², JST-ALCA:SMART Solar Cell PJ, Chiba Univ.³, Kogakuin Univ.⁴)

2:15 PM - 2:30 PM

▲ [17p-E13-6] Improvement of Junction Properties of SMART Solar Cells grown by RF-MBE

^○Ke Wang^1,2,3, Kazuhide Kusakabe^1,2,3, Naoki Hashimoto^1,2,3, Akihiko Yoshikawa^1,2,3,4 (C-SGIR, Chiba Univ.¹, VBL, Chiba Univ.², JST-ALCA:SMART Solar Cell PJ, Chiba Univ.³, Kogakuin Univ.⁴)

Break 14:30〜14:45 (2:30 PM - 2:45 PM)

2:45 PM - 3:00 PM

△ [17p-E13-7] Application to flame sensor of nitride-based hetero-field-effect-transistor-type UV photosensors

^○（B）Yuma Yamamoto¹, Takuya Murase¹, Mami Ishiguro¹, Tomoaki Yamada¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (Meijo univ.¹, Akasaki Inst.²)

3:00 PM - 3:15 PM

[17p-E13-8] Radiation beam characteristics of regularly arranged nanocolumn light emitters – (I)

^○Ai Yanagihara¹, Shunsuke Ishizawa¹, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

3:15 PM - 3:30 PM

[17p-E13-9] Radiation beam characteristics of regularly arranged nanocolumn light emitters - (II)

^○（PC）Shunsuke Ishizawa¹, Ai Yanagihara¹, Yuki Sumikawa¹, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

3:30 PM - 3:45 PM

[17p-E13-10] PL emission property of nitride nanocolumns on Si substrates

^○Daishi Fukushima¹, Hiroaki Hayashi¹, Toshifumi Kudo¹, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

3:45 PM - 4:00 PM

[17p-E13-11] Investigation of optical gain of optically pumped lasing action at a wavelength of approximately 390 nm in hexagonal GaN microdisks

^○Tetsuya Kouno¹, Masaru Sakai², Katsumi Kishino³, Kazuhiko Hara¹ (Shizuoka Univ.¹, Univ. of Yamanashi², Sophia Univ.³)

4:00 PM - 4:15 PM

[17p-E13-12] Selective Area Growth of Regularly Arranged AlGaN Nanocolumns by Nanotemplate

^○Kouji Yamano¹, Katsumi Kishino^1,2, Hiroto Sekiguchi³, Akihiro Wakahara³ (Sophia Univ.¹, Sophia Nanotech Research center², Toyohashi Univ. Tech³)

Break 16:15〜16:30 (4:15 PM - 4:30 PM)

4:30 PM - 4:45 PM

[17p-E13-13] Fabrication of GaN nanostructures by hydrogen environment anisotropic thermal etching (HEATE) technique

^○（B）Ryo Hachiya¹, Akihiko Kikuchi¹, Hiroki Hachiya¹, Ryo Kita¹ (Sophia University¹)

4:45 PM - 5:00 PM

[17p-E13-14] Study of Patterned Substrates and Growth Condition for Thinning Nanocolumns

^○Yutaro Mizuno^1,2, Yusuke Igawa^1,2, Kota Asami^1,2, Tatsuya Kanou^1,2, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

5:00 PM - 5:15 PM

△ [17p-E13-15] Fabrication of InGaN/GaN Nanowire Quantum Dots by Selective-Area MOCVD

^○Choi Kihyun¹, Munetaka Arita¹, Yasuhiko Arakawa^1,2 (NanoQuine, Univ. of Tokyo¹, IIS, Univ. of Tokyo²)

5:15 PM - 5:30 PM

[17p-E13-16] MOCVD growth of GaN/Al_xGa_1-xN (x < 0.25) quantum dots formed by interface fluctuation

^○Munetaka Arita¹, Taichi Iki², Satoshi Kako², Yasuhiko Arakawa^1,2 (NanoQuine, Univ.of Tokyo¹, IIS, Univ. of Tokyo²)

5:30 PM - 5:45 PM

[17p-E13-17] Single dot spectroscopy of GaN/AlGaN quantum dots formed by interface fluctuation ~ Observation of narrowest photoluminescence linewidth (110 μeV) ~

^○Munetaka Arita¹, Taichi Iki², Satoshi Kako², Yasuhiko Arakawa^1,2 (NanoQuine, Univ.of Tokyo¹, IIS, Univ. of Tokyo²)

5:45 PM - 6:00 PM

▲ [17p-E13-18] Polarization Properties of Single Zinc-Blende GaN/AlN Quantum Dots

^○Sylvain Sergent¹, Satoshi Kako², Matthias Buerger³, Thorsten Schupp³, Donat As³, Yasuhiko Arakawa^1,2 (Nanoquine, Tokyo Uni.¹, IIS, Tokyo Uni.², Paderborn Uni.³)