Oral presentation

16. Amorphous and Microcrystalline Materials » 16.3 Bulk, thin-film and other silicon-based solar cells

[18a-E12-1~10] 16.3 Bulk, thin-film and other silicon-based solar cells

Tue. Mar 18, 2014 9:00 AM - 11:45 AM E12 (E206)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[18a-E12-1] Improvement of n-type nc-3C-SiC:H heterojunction emitter for c-Si solar cells

^○Kazuki Shimizu¹, Eric Ateto¹, Shinsuke Miyajima¹, Makoto Konagai^1,2 (Graduate School, Tokyo Tech.¹, PVREC, Tokyo Tech.²)

9:15 AM - 9:30 AM

△ [18a-E12-2] Reduction of the interface SiH₂ content for suppression of the interface recombination in a-Si:H/c-Si heterojunction solar cells

^○Kohei Usami¹, Hiroyuki Fujiwara¹ (Gifu Univ.¹)

9:30 AM - 9:45 AM

[18a-E12-3] Improvement in Cat-CVD a-Si/c-Si hetero-junction interface by surface oxidation

^○Takafumi Oikawa¹, Keisuke Ohdaira^{1, 2}, Hideki Matsumura^{1, 2} (JAIST¹, JST CREST²)

9:45 AM - 10:00 AM

▼ [18a-E12-4] Drastic reduction in surface recombination velocity of Cat-CVD SiN_x/c-Si structures by phosphorus (P) Cat-doping

^○（D）チャムチートリン^1,2, 小山小市^1,2, 大平圭介^1,2, 松村英樹^1,2 (JAIST¹, JST CREST²)

10:00 AM - 10:15 AM

[18a-E12-5] Influence of O₃ on the properties of AlO_x passivation film grown by mist CVD

^○Takayuki Uchida¹, Toshiyuki Kawaharamura², Kenji Shibayama¹, Shizuo Fujita¹, Takahiro Hiramatsu³, Hiroyuki Orita³ (Graduate School of Eng., Kyoto Univ.¹, Inst. for Nanotechnology, Kochi Univ. of Tech.², TMEIC³)

Break 10:15〜10:30 (10:15 AM - 10:30 AM)

10:30 AM - 10:45 AM

△ [18a-E12-6] Study of Stacking Surface Passivation Structure for Crystalline Si Solar Cells

^○Takaaki Katsumata^1,2,4, Norihiro Ikeno¹, Shinichi Satoh^3,4, Haruhiko Yoshida^3,4, Koji Arafune^3,4, Toyohiro Chikyow^2,4, Atsushi Ogura^1,4 (Meiji Univ.¹, NIMS², Univ. of Hyogo³, JST-CREST⁴)

10:45 AM - 11:00 AM

[18a-E12-7] A factor to determine charge density and its polarity in alumina passivation films for Si solar cells

^○Masato Yagi¹, Yoh-Ichiro Ogita¹ (Kanagawa Institute of Technology¹)

11:00 AM - 11:15 AM

[18a-E12-8] Correlation between fixed charge and chemical composition for Sr_xSiO_x+2 layers

^○（M1）Shota Taniwaki¹, Yuki Toyoshima¹, Yasushi Hotta^1,3, Haruhiko Yoshida^1,3, Koji Arafune^1,3, Atsushi Ogura^2,3, Shin-ichi Satoh^1,3 (Univ. of Hyogo¹, Meiji Univ.², JST-CREST³)

11:15 AM - 11:30 AM

△ [18a-E12-9] Passivation of Si surfaces by using nitric acid oxidation of silicon (NAOS) method and improvement of crystalline silicon solar cell characteristics.

^○Ryo Hirose^1,2, Taketoshi Matsumoto^1,2, Hikaru Kobayashi^1,2 (ISIR, Osaka Univ.¹, CREST-JST²)

11:30 AM - 11:45 AM

▲ [18a-E12-10] Oxygen Radical Treatment used for Fabricating Metal-Insulator-Semiconductor Solar Cells

^○（B）Satoshi Shigeno¹, Shinya Yoshidomi¹, Masahiko Hasumi¹, Toshiyuki Sameshima¹ (TUAT¹)