Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[18a-E13-1~11] 15.4 III-V-group nitride crystals

Tue. Mar 18, 2014 9:00 AM - 12:00 PM E13 (E301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[18a-E13-1] Mechanism of the strain modulation of GaN grown on Si substrates by a thin AlN/GaN superlattice interlayer

^○Xu Qiang Shen¹, Tokio Takahashi¹, Toshihide Ide¹, Mitsuaki Shimizu¹ (AIST¹)

9:15 AM - 9:30 AM

[18a-E13-2] Structural characterization of GaN grown with buffer layers on graphene/Si (100) substrate by RF-MBE

^○Tsutomu Araki¹, Satoru Uchimura¹, Yasushi Nanishi^2,3, Tatsuya Fujishima⁴, Tomás Palacios⁴, Amaia Zurutuza⁵ (Ritsumeikan Univ., Dept. of Photonics¹, R-GIRO², Seoul National Univ.³, Massachusetts Institute of Technology⁴, Graphenea⁵)

9:30 AM - 9:45 AM

[18a-E13-3] Influence of mono-layer Graphene on growth process of GaN on mono-layer Graphene/SiO2-film/Si(001) substrate by ECR-MBE method

^○Tokuo Yodo¹, Yuuichi Mukaida¹, Daishi Shiojiri², Mamoru Yoshimoto² (Osaka Inst. of Tech.¹, Tokyo Inst. of Tech.²)

9:45 AM - 10:00 AM

[18a-E13-4] Nitride LEDs prepared on amorphous substrates with graphene buffer layers

JohnWoo Shon¹, ^○Jitsuo Ohta¹, Kohei Ueno¹, Hiroshi Fujioka^1,2 (The Univ. of Tokyo¹, JST-CREST²)

10:00 AM - 10:15 AM

[18a-E13-5] Effect of pretreatment on carbonization of Si surface using CO gas

^○Momoko Deura¹, Ichiro Yonenaga¹, Hiroyuki Fukuyama² (IMR, Tohoku Univ.¹, IMRAM, Tohoku Univ.²)

Break 10:15〜10:30 (10:15 AM - 10:30 AM)

10:30 AM - 10:45 AM

△ [18a-E13-6] Investigation of high-temperature sputtered-AlN buffer layer

^○（M1）Hiroaki Ito¹, Daisuke Iida¹, Yasunari Kondo¹, Mihoko Sowa¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, satoshi Kamiyama¹, Isamu Akasaki^1,2 (Meijo Univ.¹, Akasaki Inst.²)

10:45 AM - 11:00 AM

△ [18a-E13-7] Orientation improvement of the sputtered AlN on Si by the Ti pre-orientation layer

^○（DC）Tadashi Mitsunari¹, Yoshio Honda¹, Hiroshi Amano^1,2 (Nagoya Univ.¹, Akasaki Research Center²)

11:00 AM - 11:15 AM

△ [18a-E13-8] MOVPE Growth of GaN on ScAlMgO₄ Substrate

^○Takuya Iwabuchi¹, Shigeyuki Kuboya¹, Tomoyuki Tanikawa^1,2, Takashi Hanada^1,2, Ryuji Katayama^1,2, Akio Minato³, Tsuguo Fukuda³, Takashi Matsuoka^1,2 (IMR, Tohoku Univ.¹, JST-CREST², Fukuda Crystal Laboratory³)

11:15 AM - 11:30 AM

[18a-E13-9] Polarity Determination of MOVPE Grown GaN on c-ScAlMgO₄ by using Anomalous Dispersion X-ray Diffraction

^○Takashi Hanada^1,2, Takuya Iwabuchi¹, Shigeyuki Kuboya¹, Tomoyuki Tanikawa^1,2, Ryuji Katayama^1,2, Akio Minato³, Tsuguo Fukuda³, Katsuhiko Inaba⁴, Takashi Matsuoka^1,2 (IMR, Tohoku Univ.¹, JST-CREST², Fukuda Crystal Lab.³, Rigaku⁴)

11:30 AM - 11:45 AM

[18a-E13-10] Growth of GaN (0001) epitaxial layer on Ga₂O₃（- (-201) substrate

^○Yoshikatsu Morishima¹, Yoshihiro Yamashita¹, Shinkuro Sato¹, Kazuyuki Iizuka¹, Akito Kuramata¹, Shigenobu Yamakoshi¹ (Tamura Corporation¹)

11:45 AM - 12:00 PM

▲ [18a-E13-11] Selective growth of N-face GaN (000-1) by group-III-source flow-rate modulation epitaxy

^○Chia-Hung Lin¹, Tetsuya Akasaka¹, Hideki Yamamoto¹ (NTT BRL¹)