Oral presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » Nanocarbon Technology

[18p-E10-1~20] Nanocarbon Technology

Tue. Mar 18, 2014 1:15 PM - 6:30 PM E10 (E204)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45〜13:15 (11:45 AM - 1:15 PM)

1:15 PM - 1:30 PM

[18p-E10-1] Effect of Hydrogen on Electronic Property of a-InGaZnO

^○Yoshihiro Ueoka¹, Yasuaki Ishikawa^1,2, Bermundo Juan Paolo¹, Haruka Yamazaki¹, Satoshi Urakawa¹, Masahiro Horita^1,2, Yukiharu Uraoka^1,2 (Nara Inst. Sci. Tech.¹, CREST²)

1:30 PM - 1:45 PM

[18p-E10-2] Charge compensation and hydrogen passivation observed in a-In-Ga-Zn-O films deposited by PLD in vacuum

^○Toshio Kamiya^1,2, Herms Johannes¹, Takatoshi Orui¹, Yuichiro Hanyu¹, Hidenori Hiramatsu^1,2, Hideya Kumomi², Hideo Hosono^1,2,3, Shigenori Ueda⁴, Naoki Ohashi^2,4 (MSL Tokyo Tech¹, MCES Tokyo Tech², FRC Tokyo Tech³, NIMS⁴)

1:45 PM - 2:00 PM

[18p-E10-3] Hydrogen-induced bandgap widening and structural relaxation in amorphous In-Ga-Zn-O

^○Kyohei Ishikawa¹, Yuichiro Hanyu¹, Hidenori Hiramatsu^1,2, Hideya Kumomi², Hideo Hosono^1,2,3, Toshio Kamiya^1,2 (MSL Tokyo tech.¹, MCES Tokyo tech.², FRC Tokyo tech.³)

2:00 PM - 2:15 PM

[18p-E10-4] Evaluation of the oxide semiconductor thin films due to the difference in the sputtering environment

^○Yasuyuki Takanashi¹, Hiroaki Tao¹, Mototaka Ochi¹, Hiroshi Goto¹, Toshihiro Kugimiya¹ (Kobe Steel, Ltd.¹)

2:15 PM - 2:30 PM

[18p-E10-5] Structural Analysis of InGaZnOⅠ: Influence of TEM Sample Preparation and Observation

^○Toru Yamazaki¹, Masayuki Funaki¹, Keiko Akutsu¹ (MST¹)

2:30 PM - 2:45 PM

[18p-E10-6] Structural analysis of InGaZnO Ⅱ：Crystal structure analysis in nano region

^○Masayuki Funaki¹, Toru Yamazaki¹, Keiko Akutsu¹ (MST¹)

2:45 PM - 3:00 PM

[18p-E10-7] Structural analysis of InGaZnO Ⅲ：Crystal structure analysis of CAAC-InGaZnO thin film

^○Masayuki Funaki¹, Toru Yamazaki¹, Keiko Akutsu¹ (MST¹)

3:00 PM - 3:15 PM

[18p-E10-8] Structural analysis of InGaZnO Ⅳ：Nanocrystalline structure evaluation using digital image analysis

^○Keiko Akutsu¹, Masayuki Funaki¹, Toru Yamazaki¹ (MST¹)

3:15 PM - 3:30 PM

[18p-E10-9] Investigation of Electron Beam Induced Effects on Nano Crystalline Oxide Semiconductor Deposited by Sputtering (1)

^○Michiko Yano¹, Erika Takahashi¹, Koji Dairiki¹, Masahiro Takahashi¹, Takuya Hirohashi¹, shunpei Yamazaki¹ (Semiconductor Energy Laboratory Co., Ltd.¹)

3:30 PM - 3:45 PM

[18p-E10-10] Investigation of Electron Beam Induced Effects on Nano Crystalline Oxide Semiconductor Deposited by Sputtering (2)

^○Koji Dairiki¹, Masashi Oota¹, Masahiro Takahashi¹, Takuya Hirohashi¹, Shunpei Yamazaki¹ (Semiconductor Energy Laboratory Co., Ltd.¹)

Break 15:45〜16:00 (3:45 PM - 4:00 PM)

4:00 PM - 4:15 PM

[18p-E10-11] In-situ electron holography of carrier accumulation at InGaZnO₄ /SiO₂ interface

^○Nobuyuki Ikarashi¹, Motofumi Saitoh¹, Hiroshi Takeda¹, Naoya Inoue¹, Hiroshi Sunamura¹, Kiyoshi Takeuchi¹, Masami Hane¹ (Renesas Electronics¹)

4:15 PM - 4:30 PM

[18p-E10-12] Development of Microwave Sintering Process and Preparation of Oxide Semiconductor Precursor Ink

^○Hea Jeong Cheong¹, Shintaro Ogura¹, Heisuke Sakai¹, Kazuhiko Takeuchi², Ritsuko Nagahata², Sei Uemura¹, Nobuko Fukuda¹ (AIST,FLEC¹, AIST,NRI²)

4:30 PM - 4:45 PM

△ [18p-E10-13] Evaluation of electronic structure in In-Ga-Zn-O thin films transistor by Photoinduced Transient Spectroscopy

^○Hiroaki Tao¹, Yasuyuki Takanashi¹, Shinya Morita¹, Aya Hino¹, Hiroshi Goto¹, Kazushi Hayashi¹, Toshihiro Kugimiya¹ (Kobe Steel, Ltd.¹)

4:45 PM - 5:00 PM

△ [18p-E10-14] Hydrogen diffusion and defects passivation in a-IGZO TFT during etch-stopper layer deposition

^○Tatsuya Toda¹, Dapeng Wang¹, Jingxin Jiang¹, Phi Hung Mai¹ (Kochi Univ. of Tech.¹)

5:00 PM - 5:15 PM

[18p-E10-15] Measurement and Analysis of Off-Leakage Current in IGZO-TFTs

^○Go Wakimura¹, Yoshimitsu Yamauchi¹, Toshimasa Matsuoka¹, Yoshinari Kamakura¹ (Osaka Univ.¹)

5:15 PM - 5:30 PM

[18p-E10-16] IGZO film Characteristic uniformity and TFT reliability for Large Sputtering Cathode

^○Motoshi Kobayashi¹, Taihei Mizuno¹, Yuusuke Ootani¹, Masaki Takei¹, Yuusuke Mizuno¹, Yasuo Ookubo¹, Tetsu Ishibashi¹, Tatsunori Isobe¹, Makoto Arai¹, Junya Kiyota¹, Kazuya Saito¹ (ULVAC¹)

5:30 PM - 5:45 PM

△ [18p-E10-17] Analysis of degradation phenomenon in oxide thin-film transistor caused by self-heating under pulse voltage stress

^○Kahori Kise¹, Shigekazu Tomai², Yoshihiro Ueoka¹, Haruka Yamazaki¹, Satoshi Urakawa¹, Koki Yano², Dapeng Wang³, Mamoru Huruta³, Masahiro Horirta^1,4, Yasuaki Ishikawa^1,4, Yukiharu Uraoka^1,4 (NAIST¹, Idemitsu Co.², Kochi Univ. of Tech.³, CREST⁴)

5:45 PM - 6:00 PM

[18p-E10-18] Transistor characteristics of single crystalline InGaZnO film grown by sputtering

^○Yoshinori Yamada¹, Daisuke Matsubayashi¹, Shinpei Matsuda¹, Yuhei Sato¹, Masashi Oota¹, Daigo Ito¹, Masashi Tsubuku¹, Masahiro Takahashi¹, Takuya Hirohashi¹, Masayuki Sakakura¹, Syunpei Yamazaki¹ (Semiconductor Energy Laboratory Co., Ltd.¹)

6:00 PM - 6:15 PM

[18p-E10-19] Suspended Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors Fabricated by Bulk Micromachining Techniques

^○Shinnosuke Iwamatsu¹, Kazushige Takechi², Yutaka Abe¹, Toru Yahagi¹, Hiroshi Tanabe², Seiya Kobayashi¹ (Yamagata Res. Inst. Technol.¹, NLT Technologies²)

6:15 PM - 6:30 PM

[18p-E10-20] Mobility enhancement effect of oxide semiconductor transistor with surrounded channel structure

^○Shinpei Matsuda¹, Daisuke Matsubayashi¹, Yoshiyuki Kobayashi¹, Masahiko Hayakawa², Yukinori Shima², Satoru Saito², Kenichi Okazaki², Junichi Koezuka², Shunpei Yamazaki^1,2 (Semiconductor Energy Laboratory Co., LTD.¹, Advanced Film Device Inc.²)