Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

[18p-E11-1~14] 14.4 Optical properties and light-emitting devices

Tue. Mar 18, 2014 1:15 PM - 5:00 PM E11 (E205)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

△ [18p-E11-1] Spin relaxation in undoped GaAs grown by VGF method

^○（M1）Yuya Yasue¹, Mitsunori Uemura¹, Kazuki Honda¹, Atsushi Tackeuchi¹ (Waseda Univ.¹)

1:30 PM - 1:45 PM

[18p-E11-2] Observations of the intermediate band in GaPN alloys by two-wavelength excited photoluminescence

^○Makiko Suetsugu¹, Touhidul Islam¹, Naoki Murakoshi¹, Tsukasa Hanaoka¹, Norihiko Kamata¹, Hiroyuki Yaguchi¹ (Saitama Univ.¹)

1:45 PM - 2:00 PM

[18p-E11-3] Comparison of the photoluminescence between InAs/InGaAsP quantum dots structure and columnar quantum dots structure

^○Rie Sato¹, Moeka Yamaguchi¹, Mamiko Sato¹, Haruka Takeuchi¹, Hajime Imai¹ (Japan Women's Univ.¹)

2:00 PM - 2:15 PM

[18p-E11-4] EXAFS analyses on the (Sc_1-xEr_x)₂O₃ films grown on Si(111) by MBE

^○Hiroo Omi¹, Takehiko Tawara¹, Reina Kaji², Takahito Hozumi², Satoru Adachi², Hideki Goto¹, Tetuomi Sougawa¹ (NTT BRL¹, Hokaidou Univ²)

2:15 PM - 2:30 PM

[18p-E11-5] Photoluminescence from ZnO:Eu films sputter-deposited on sapphire substrates

^○Housei Akazawa¹, Hiroyuki Shinojima² (NTT MI Labs.¹, Kurume NCT²)

2:30 PM - 2:45 PM

△ [18p-E11-6] Sputtering-assisted MOCVD and luminescence properties of Tm-doped ZnO

^○Daiki Kishimoto¹, Ryutaro Okada¹, Yusuke Tateyama¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

Break 14:45〜15:00 (2:45 PM - 3:00 PM)

3:00 PM - 3:15 PM

[18p-E11-7] Preparation of rare-earth doped GaN films grown by radical N2 assisted compound-source MBE (2)

^○Shinji Yudate¹, Yuki Koyama¹, Akira Miyata¹, Sho Shirakata¹ (Ehime Univ.¹)

3:15 PM - 3:30 PM

[18p-E11-8] Improvement of red luminescent efficiency in Eu-doped GaN/AlGaN MQW LED

^○Taknori Arai¹, Ryuta Wakamatsu¹, Dong-gun Lee¹, Atsushi Koizumi¹, Fujiwara Yasufumi¹ (Osaka Univ.¹)

3:30 PM - 3:45 PM

△ [18p-E11-9] Mutual energy transfer between Eu luminescent sites in Eu-doped GaN

^○Ryuta Wakkamatsu¹, Timmerman Dolf¹, Kazuteru Tanaka¹, Takanori Kojima¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

3:45 PM - 4:00 PM

△ [18p-E11-10] Characterization of energy transfer process in Eu-doped GaN by two-wavelength excited photoluminescence

^○Kohei Okada¹, Ryuta Wakamatsu¹, Dolf Timmerman¹, Takanori Kojima¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

4:00 PM - 4:15 PM

△ [18p-E11-11] Enhancement of Eu photoluminescence intensity in Eu,O-codoped GaN by microcavity

^○（M1）Tomohiro Inaba¹, Dongun Lee¹, Ryuta Wakamatsu¹, Takanori Kojima¹, Atsusi Koizumi¹, yasufumi Fujiwara¹ (Osaka Univ.¹)

4:15 PM - 4:30 PM

△ [18p-E11-12] Effects of oxygen codoping on Eu luminescence properties in Eu-doped GaN

^○Masaaki Matsuda¹, Ryuta Wakamatsu¹, Takanori Kojima¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ¹)

4:30 PM - 4:45 PM

[18p-E11-13] Local structural analysis on Eu ions in Eu,O co-doped GaN by fluorescence XAFS

^○Hironori Ofuchi¹, Dong-gun Lee², Masaaki Matsuda², Ryuta Wakamatsu², Wanxin Zhu², Atsushi Koizumi², Tetsuo Honma¹, Yasufumi Fujiwara² (JASRI/SPring-8¹, Osaka Univ.²)

4:45 PM - 5:00 PM

[18p-E11-14] Discriminative observation of energy transfer and back transfer in GaAs:Er,O

^○Masashi Ishii¹, Koizumi Atsushi², Yoshikazu Takeda³, Yasufumi Fujiwara² (NIMS¹, Osaka Univ.², NISRI³)