Oral presentation

13. Semiconductors A (Silicon) » 13.3 Si Process・Interconnect・MEMS・Integration

[18p-E14-1~21] 13.3 Si Process・Interconnect・MEMS・Integration

Tue. Mar 18, 2014 1:15 PM - 6:45 PM E14 (E302)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45〜13:15 (11:45 AM - 1:15 PM)

1:15 PM - 1:30 PM

[18p-E14-1] Strain Distributions at Edge of Corner in Bonded Si in Chip-On-Wafer Structures

^○Noriyuki Taoka¹, Osamu Nakatsuka¹, Mizushima Yoriko^2,3, Hideki kitada^2,3, Kim Young Suk³, Tomoji Nakamura², Takayuki Ohba^3,4, Shigeaki Zaima¹ (Nagoya Univ.¹, Fujitsu Lab.², Tokyo Inst. Tech.³, The Univ. of Tokyo⁴)

1:30 PM - 1:45 PM

[18p-E14-2] Application of electrophoretic deposition of nano-particles to high-speed via filling

^○Ryo Takigawa¹, Kiyoaki Nakahara¹, Takanori Shuto¹, Akihiro Ikeda¹, Tanemasa Asano¹ (Kyushu University¹)

1:45 PM - 2:00 PM

[18p-E14-3] In-Situ Observation of Ultrasonic Bonding of Cone Bump Using High Speed Camera

^○Takanori Shuto^1,2, Tanemasa Asano¹ (Kyushu Univ.¹, JSPS Research Fellow²)

2:00 PM - 2:15 PM

[18p-E14-4] Mechanism of Room-Temperature Microjoining Using Ultrasonic Bonding of Compliant Bump

^○Keiichiro Iwanabe¹, Takanori Shuto¹, Tanemasa Asano¹ (Kyushu Univ¹)

2:15 PM - 2:30 PM

[18p-E14-5] Fabrication of Three-Dimensional Integrated Circuits by using Au/SiO₂ Hybrid Bonding

^○Masahide Goto¹, Kei Hagiwara¹, Yoshinori Iguchi¹, Hiroshi Ohtake¹, Takuya Saraya², Eiji Higurashi², Hiroshi Toshiyoshi², Toshiro Hiramoto² (NHK STRL¹, Univ. of Tokyo²)

2:30 PM - 2:45 PM

[18p-E14-6] Photo-Patternable Materials for Low Temperature Bonding and Thick Microfluidic Channel Fabrication

^○Katsuhiko Hieda¹, Hiroshi Yamaguchi¹, Zen Komiya¹, Tomokazu Miyazaki², Sara Peeters², John O‘Callghan³, Karolien Jans³, Chengxun Liu³, Liesbet Lagae³, Paru Deshpande³ (JSR Corporation¹, JSRMicro N.V.², IMEC³)

2:45 PM - 3:00 PM

[18p-E14-7] PDMS-made Bacteria Trapping Chip using Beads

^○Ryuhei Hayashi¹, Hirokazu Nakazawa¹, Yuusuke Nishimura¹, Makoto Ishida¹, Kazuaki Sawada¹, Hiromu Ishii¹, Katsuyuki Machida^2,3, Kazuya Masu², Kenichirou Iida⁴, Mitumasa Saito⁴, Shinichi Yoshida⁴ (Toyohashi Univ. of Technology¹, Tokyo Institute of Technology², NTT-AT³, Graduate School of Medical Sciences, Kyushu Univ.⁴)

3:00 PM - 3:15 PM

[18p-E14-8] Improvement of Fluorescence Detection Sensitivity for Bacterial Sensor using Microbeads

^○ＹｕｓｕｋｅＮｉｓｈｉｍｕｒａ¹ (Toyohashi Univ. of Technology¹)

3:15 PM - 3:30 PM

[18p-E14-9] Study of High-Strength Bonding in Low-Temperature Chip Direct Bonding

^○Yun Liu¹, Hideki Nagai¹, Katsuyuki Utaka¹, Yuichi Matsushima², Takashi Kasahara¹, Jun Mizuno³ (Waseda Univ.¹, GCSRO Waseda Univ.², INN Waseda Univ.³)

3:30 PM - 3:45 PM

[18p-E14-10] A Truly Compact LED induced Fluorescence Detection Module

^○Toshihiro Kamei¹, Keiko Sumitomo¹, Noriyuki Tsujimura¹, Takeshi Kobayashi¹, Ryutaro Maeda¹ (AIST¹)

3:45 PM - 4:00 PM

△ [18p-E14-11] Pattern Size Dependence of Anisotropic Biaxial Stresses in Strained Si Using Surface Enhanced Raman Scattering

^○Ryuhei Iwasaki¹, Kohki Nagata¹, Daisuke Kosemura¹, Atsushi Ogura¹ (Meiji Univ.¹)

Break 16:00〜16:15 (4:00 PM - 4:15 PM)

4:15 PM - 4:30 PM

△ [18p-E14-12] Reduction of SiO₂ mixed with sugar by H-radical generated from thermal plasma

^○（B）Yuji Okamoto^1,2, Yoshikazu Suzuki², Hideomi Koinuma³, Masatomo Sumiya¹ (NIMS¹, Tsukuba Uni², GSFS³)

4:30 PM - 4:45 PM

△ [18p-E14-13] Raman analysis of the surface strain in transistor channels using localized plasmon resonance

^○Takahiro Kijima¹, Daisuke Kosemura¹, Siti Norhidayah Mohd Yusoff¹, Shoutarou Yamamoto¹, Ryosuke Imai¹, Atsushi Ogura¹ (Meiji Univ.¹)

4:45 PM - 5:00 PM

[18p-E14-14] Thermodynamics of carbothermic reduction for solar grade silicon

^○Kenji Itaka¹ (Hirosaki Univ,¹)

5:00 PM - 5:15 PM

△ [18p-E14-15] Exploration of catalysts for solar grade silica reduction process

^○Takuya Ogasawara¹, Abd Erahamane Boucetta¹, Hiroyuki Sato¹, Yasubumi Furuya¹, Masatomo Sumiya², Hideomi Koinuma³, Kenji Itaka¹ (Hirosaki Univ.¹, NIMS², Univ. Tokyo³)

5:15 PM - 5:30 PM

[18p-E14-16] Laser Transfer of BST Thin Film to LiNbO₃ Substrate

^○Tetsuo Samoto¹, Kosuke Hikichi¹, Hideki Hirano¹, Shuji Tanaka¹ (Tohoku Univ.¹)

5:30 PM - 5:45 PM

△ [18p-E14-17] Morphological effect of Sn during Ge_1-xSn_x molecular beam epitaxy on Ge(111)

^○Hiromu Hamasaki¹, Syoichi Kabuyanagi¹, Tomonori Nishimura¹, Kosuke Nagashio¹, Akira Toriumi¹ (Univ. of Tokyo¹)

5:45 PM - 6:00 PM

△ [18p-E14-18] Annealing temperature dependence of SAB based Si/Si junctions

^○Masashi Morimoto¹, J Laing¹, S Nishida¹, N Shigekawa¹, Li Chai¹, K Takemura¹, T Hayashi¹ (Osaka city Univ¹)

6:00 PM - 6:15 PM

△ [18p-E14-19] Theoretical Study of Deposition of Etchant Species in Silicon-dioxide Etching Process via Quantum Chemical Molecular Dynamics Method

^○（D）Hiroshi Ito¹, Takuya Kuwahara¹, Yuji Higuchi¹, Nobuki Ozawa¹, Seiji Samukawa², Momoji Kubo¹ (Graduate School of Engineering, Tohoku Univ.¹, Inst. of Fluid Science, Tohoku Univ.²)

6:15 PM - 6:30 PM

[18p-E14-20] Deposition of thin Si, Ge, and SiGe films using nanocryatalline silicon ballistic electron emitter

^○Ryutaro Suda¹, Mamiko Yagi¹, Akira Kojima¹, Mentek Romain¹, Jun-ichi Shirakashi¹, Nobuyoshi Koshida¹ (Graduate School of Eng., Tokyo Univ. of Agri. & Technol.¹)

6:30 PM - 6:45 PM

[18p-E14-21] Effect Analysis of Size Fluctuation of the Fine Line-patterns Buckling

^○Keisuke Unosawa¹, Sachiyo Ito¹, Keiji Suzuki¹ (Toshiba Corporate Manufacturing Engineering Center¹)