Session information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[19a-D8-1~13] 14.3 Electron devices and Process technology

Wed. Mar 19, 2014 9:00 AM - 12:30 PM D8 (D215)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[19a-D8-1] Calculation of ultimate on-resistance in GaN lateral HFETs using device simulation

^○Kazuma Terayama¹, Akira Nakajima², Shinichi Nishizawa², Hiromichi Ohasi², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹, Hiroshi Iwai¹ (Tokyo Tech.¹, AIST²)

9:15 AM - 9:30 AM

[19a-D8-2] Investigation on the vertical buffer leakage current using AlGaN/GaN HEMTs on GaN substrates

^○Shinichi Tanabe¹, Noriyuki Watanabe¹, Masahiro Uchida², Takashi Fukada³, Kazumasa Kiyomi³, Hideaki Matsuzaki¹ (NTT Photonics Labs.¹, NTT-AT², Mitsubishi Chemical³)

9:30 AM - 9:45 AM

[19a-D8-3] Electron-temperature estimation of AlGaN/GaN HEMTs based on Electro-Luminescence

^○Yuichi Fujimoto¹, Tomotaka Narita¹, Akio Wakejima¹, Takashi Egawa¹ (Nagoya Institute of Technology¹)

9:45 AM - 10:00 AM

[19a-D8-4] Analysis of transient characteristics of GaN HEMT using Field Plate which applies voltage independently

^○Suguru Mase¹, Akio Wakejima¹, Takashi Egawa¹ (Nagoya Institute of Technology¹)

10:00 AM - 10:15 AM

△ [19a-D8-5] Off-stress induced current instability in AlGaN/GaN HEMT

^○（M1）Kenya Nishiguchi¹, Joel T.Asubar¹, Tamotsu Hashizume^1,2 (RCIQE, Hokkaido Univ.¹, JST-CREST²)

10:15 AM - 10:30 AM

△ [19a-D8-6] Simulation of GaN HFET Side-gating Effect Photo-responses

^○Yusuke Ikawa¹, Keunsam Lee², Jin-Ping Ao¹, Yasuo Ohno³ (Univ. Tokushima¹, Nihon Synopsys², e-Device³)

Break 10:30〜10:45 (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

[19a-D8-7] Selective dry-etching technologies for normally-off GaN HEMTs

^○Akihiro Ando¹, Yamato Osada², Ryuichiro Kamimura², Akio Wakejima¹, Takashi Egawa¹ (Nagoya Inst. of Tech¹, ULVAC²)

11:00 AM - 11:15 AM

△ [19a-D8-8] Selective-electrochemical etching of p-GaN layers grown on AlGaN/GaN heterostructures

^○Yusuke Kumazaki¹, Taketomo Sato¹, Tamotsu Hashizume^1,2 (RCIQE, Hokkaido Univ.¹, JST-CREST²)

11:15 AM - 11:30 AM

△ [19a-D8-9] Current Collapse Suppression in AlGaN/GaN HEMTs by Means of Slant Field Plates Fabricated by Multi-layer SiCN

^○（M2）Kengo Kobayashi¹, Shinya Hatakeyama¹, Tomohiro Yoshida¹, Yuhei Yabe¹, Daniel Piedra², Tomas Palacios², Taiichi Otsuji¹, Tetsuya Suemitsu¹ (RIEC, Tohoku Univ.¹, MTL, MIT²)

11:30 AM - 11:45 AM

△ [19a-D8-10] AlGaN/GaN-based p-channel HFETs with wide-operating temperature

^○Hiroaki Yonezawa¹, Rei Kayanuma¹, Akira Nakajima³, Shinichi Nishizawa³, Hiromichi Ohashi³, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai², Kazuo Tsutsui¹ (Tokyo Tech.IGSSE¹, Tokyo Tech.FRC², AIST³)

11:45 AM - 12:00 PM

[19a-D8-11] A GaN HEMT fine gate process by an i-line stepper

^○Hiroyuki Ichikawa¹, Chihoko Mizue¹, Isao Makabe¹, Yasunori Tateno¹, Ken Nakata¹, Kazutaka Inoue¹ (Sumitomo Electric Industries, Ltd.¹)

12:00 PM - 12:15 PM

[19a-D8-12] InAlN barrier thickness dependence of device performance for InAlN/AlN/GaN HEMTs (II)

^○Yoshimi Yamashita¹, Issei Watanabe¹, Akira Endoh^1,2, Akifumi Kasamatsu¹, Takashi Mimura^1,2 (NICT¹, Fujitsu Lab.²)

12:15 PM - 12:30 PM

[19a-D8-13] Suppression of self-heating effect in AlGaN/GaN HEMTs by transfer to a copper plate using layered BN as a release layer

^○Masanobu Hiroki¹, Kazuhide Kumakura¹, Hideki Yamamoto¹ (NTT BRL¹)

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