Session information

Oral presentation

13. Semiconductors A (Silicon) » 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

[19a-D9-1~13] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

Wed. Mar 19, 2014 9:00 AM - 12:30 PM D9 (D315)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:00 AM - 9:15 AM

[19a-D9-1] Inhibition of copper dissolution by removal of oxidants from rinsing water using noble metal catalysts

^○Daisaku Yano¹, Masami Murayama¹, Masao Takahashi², Hikaru Kobayashi², Koji Yamanaka¹ (Organo¹, Osaka Univ.²)

9:15 AM - 9:30 AM

[19a-D9-2] Molecular Dynamics Analysis on the Microscopic Behavior of Water near SiO₂ Surface

^○Satoshi Nakaoka¹, Yasutaka Yamaguchi¹, Masayuki Kawakami², Daisaku Yano², Koji Yamanaka² (Osaka Univ.¹, Organo Corp.²)

9:30 AM - 9:45 AM

[19a-D9-3] Evaluation Methods for Water Permeation into Fine Pore Patterns

^○Mieko Kashi¹, Takuya Kambayashi¹, Masaki Okawa², Megumi Hamano¹, Toshinori Jin'oka¹, Hiroki Takahashi¹, Katsuhiro Ota¹, Tomonori Saeki¹ (Hitachi Yokohama Research Lab.¹, Kokusai Electric Semiconductor Service²)

9:45 AM - 10:00 AM

[19a-D9-4] In-line measurement of hydrofluoric acid concentration during SiO2 wet etching

^○So Takagi¹, Takuya Onoda¹, Yoshihiro Mori¹ (HORIBA Ltd.¹)

10:00 AM - 10:15 AM

[19a-D9-5] Comparison of Wetting Properties between GeO₂/Ge and SiO₂/Si at Controlled Relative Humidity by in situ XPS

^○Kenta Arima¹, Yoshie Kawai¹, Yuya Minoura¹, Yusuke Saito¹, Daichi Mori¹, Kentaro Kawai¹, Takuji Hosoi¹, Heiji Watanabe¹, Mizuho Morita¹, Zhi Liu² (Osaka Univ.¹, Lawrence Berkeley National Lab.²)

10:15 AM - 10:30 AM

[19a-D9-6] Effect of Si(100) surface flattening process on device characteristics

^○Sohya Kudoh¹, Shun-ichiro Ohmi¹, Dae-Hee Han¹, Nithi Atthi¹ (Tokyo Tech.¹)

Break 10:30〜10:45 (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

[19a-D9-7] Depth profiles of metals gettered by BMDs in silicon substrates

^○Rikiichi Ohno¹, Koichiro Saga¹ (Sony corp.¹)

11:00 AM - 11:15 AM

[19a-D9-8] Theoretical Study of Diffusion Processes at Metal/Semiconductor Interfaces

^○Tomoki Hiramatsu¹, Takashi Nakayama¹ (Chiba Univ.¹)

11:15 AM - 11:30 AM

[19a-D9-9] New evaluation method for the surface energy of MEMS cantilever

^○Ichiroh Kato¹ (JAXA¹)

11:30 AM - 11:45 AM

[19a-D9-10] EXAFS measurement of encapsulated Bi nanoline in Si

^○Koichi Murata^1,2, Kiyofumi Nitta³, Tomoya Uruga³, Yasuko Terada³, Wataru Yashiro⁴, Koh-ichi Nittoh¹, Osami Sakata¹, Kazushi Miki^1,2 (NIMS¹, Univ. of Tsukuba², JASRI³, Tohoku Univ.⁴)

11:45 AM - 12:00 PM

[19a-D9-11] Characterization of Electronic Charged States of Self-Aligned Coupled Si Quantum Dots by AFM/KFM Probe Technique

^○Naoki Tsunekawa¹, Katsunori Makihara¹, Mitsuhisa Ikeda², Seiichi Miyazaki¹ (Nagoya Univ.¹, Hiroshima Univ.²)

12:00 PM - 12:15 PM

[19a-D9-12] Laser-assisted Atom Probe Analysis of Carbon-doped Silicon

^○Teruyuki Kinno¹, Tomokazu Sasaki², Tadakatsu Ohkubo³, Mitsuhiro Tomita¹, Kazuhiro Hono³ (Toshiba R&D Center¹, Toshiba Nanoanalysis², NIMS³)

12:15 PM - 12:30 PM

[19a-D9-13] Size Effects in Ultraviolet Raman Spectra of Si Nanowires and Ultrathin SOI

^○Tetsuya Tada¹, Poborchii Vladimir¹, Yukinori Morita², Geshev Pavel³ (AIST-NeRI¹, GNC-AIST², Institute of Thermophysics³)

▲