[19a-E13-1~11] 15.4 III-V-group nitride crystals

Wed. Mar 19, 2014 9:00 AM - 12:00 PM E13 (E301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

▲ [19a-E13-1] Radiation Properties of M-plane AlGaN MQW Light-Emitting Diodes

^○Ryan Banal¹, Yoshitaka Taniyasu¹, Hideki Yamamoto¹ (NTT Basic Research Laboratories¹)

9:15 AM - 9:30 AM

△ [19a-E13-2] Influences on the lattice-relaxation layer of AlGaN multiple quantum wells on sapphire

^○（M1）Kazuhiro Nakahama¹, fumitsugu Fukuyo^1,2, Hideto Miyake¹, Kazumasa Hiramatsu¹, Harumasa Yoshida², Yuji Kobayashi² (Mie Univ.¹, HAMAMATSU PHOTONICS K. K.²)

9:30 AM - 9:45 AM

△ [19a-E13-3] Development of Vertical-type Deep Ultraviolet LED on n⁺Si substrate(2)

^○（M1）Kentaro Shibano¹, Noriko Kurose², Tsutomu Araki¹, Yoshinobu Aoyagi² (Ritsumeikan Univ.,¹, Ritsumeikan Univ., The Research Organization of Science and Technology²)

9:45 AM - 10:00 AM

[19a-E13-4] Remarkably Short Radiative Recombination Lifetime of High Quality Semipolar AlGaN/AlN Quantum Wells due to Suppression of Internal Electric Field

^○Shuhei Ichikawa¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

10:00 AM - 10:15 AM

△ [19a-E13-5] In-plane Polarization Control of Semipolar AlGaN/AlN Quantum Wells

^○Shuhei Ichikawa¹, Ryota Ishii¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

10:15 AM - 10:30 AM

△ [19a-E13-6] High growth rate of high quality AlInN by MOVPE

^○（B）Kazuki Ikeyama¹, Yugo Kozuka¹, Toshiki Yasuda¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (Meijo Univ.¹, ARC, Nagoya Univ.²)

Break 10:30〜10:45 (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

△ [19a-E13-7] Nitride-based distributed Bragg reflectors with AlInN grown at high growth rate

^○（M1）Yugo Kozuka¹, Kazuki Ikeyama¹, Toshiki Yasuda¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (Meijo Univ¹, Akasaki Research Center, Nagoya Univ²)

11:00 AM - 11:15 AM

[19a-E13-8] Emission characteristics of m-plane Al_1-xIn_xN epilayers grown on a freestanding GaN substrate by MOVPE (I)

^○Shigefusa Chichibu¹, Kentaro Furusawa¹, Tomomi Ohtomo¹, kouji Hazu¹, Takeyoshi Onuma¹, Yoichi Ishikawa¹, Masanori Tashiro¹, Hirotaka Ikeda², Kenji Fujito² (IMRAM, Tohoku Univ.¹, Mitsubishi Chemical Corporation²)

11:15 AM - 11:30 AM

△ [19a-E13-9] Coherent Growth of Semipolar (11-22) InGaN/AlGaN Stress-Compensated Superlattices

^○（D）Junichi Nishinaka¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

11:30 AM - 11:45 AM

[19a-E13-10] Characteristics of nitride films etched with Cl2 neutral-beam

^○Jitsuo Ohta¹, Halubai Sekhar², Tomohiro Kubota², Takeru Okada^2,4, Seiji Samukawa^2,3,4, Hiroshi Fujioka^1,4 (IIS, The Univ. of Tokyo¹, IFS, Tohoku Univ.², WPI-AIMR, Tohoku Univ.³, JST-CREST⁴)

11:45 AM - 12:00 PM

▼ [19a-E13-11] Pre-sputter Technology for GaN Acceptor Doping by Mg-ion Implantation

^○（D）Zheng Sun³, Tsutomu Nagayama¹, Tetsuya Watanabe², Yoshio Honda³, Hiroshi Amano^3,4 (Nissin Ion Equipment Co., Ltd.¹, Nissin Electric Co., Ltd.², Department of Electrical Engineering and Computer Science, Nagoya Univ.³, Akasaki Research Center, Nagoya Univ.⁴)