Session information

Oral presentation

08. Plasma Electronics » 8.4 Plasma etching

[19a-F6-1~6] 8.4 Plasma etching

Wed. Mar 19, 2014 11:00 AM - 12:30 PM F6 (F306)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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11:00 AM - 11:15 AM

[19a-F6-1] Real-time / in-situ electron spin resonance analysis of surface reactions of poly(methyl-methacrylate) during plasma processes

^○（PC）Yudai Miyawaki¹, Haoran Wang¹, Kenji Ishikawa¹, Yusuke Kondo¹, Keigo Takeda¹, Hiroki Kondo¹, Hideo Horibe², Makoto Sekine¹, Masaru Hori¹ (Nagoya Univ.¹, Osaka City Univ.²)

11:15 AM - 11:30 AM

[19a-F6-2] Molecular Dynamics Analysis of Surface Reaction Kinetics during Si Etching in Cl-based Plasmas: Oblique Incidence of Etch Byproducts Ions

^○（D）Nobuya Nakazaki¹, Yoshinori Takao¹, Koji Eriguchi¹, Kouichi Ono¹ (Kyoto Univ.¹)

11:30 AM - 11:45 AM

[19a-F6-3] Development of High Aspect Ratio TSV Etching Process for High-capacitor Fabrication

^○Takahide Murayama^1,2, Toshiyuki Sakuishi^1,2, Yasuhiro Morikawa^1,2, Koukou Suu^1,2 (NMEMS Technology Research Organization¹, ULVAC, Inc., Inst. of Semiconductor and Electronics Tech.²)

11:45 AM - 12:00 PM

[19a-F6-4] Analysis of Surface Roughness during Si Etching in Inductively Coupled Cl₂ Plasmas

^○（D）Nobuya Nakazaki¹, Haruka Matsumoto², Yoshinori Takao¹, Koji Eriguchi¹, kouichi Ono¹ (Kyoto Univ.¹, Kyoto Univ.²)

12:00 PM - 12:15 PM

[19a-F6-5] Study on plasma emission lights-surface interactions

^○Yan Zhang¹, Kenji Ishikawa¹, Makoto Sekine¹, Masanaga Fukasawa², Kazunori Nagahata², Shigetaka Tomiya², Tetsuya Tatsumi², Keigo Takeda², Hiroki Kondo¹, Masaru Hori¹ (Nagoya Univ.¹, Sony²)

12:15 PM - 12:30 PM

[19a-F6-6] CH₄/H₂ plasma etching on gallium nitride at high temperature

^○（M1）Takashi Kako¹, Zecheng Liu¹, Kenji Ishikawa¹, Osamu Oda¹, Keigo Takeda¹, Hiroki Kondo¹, Makoto Sekine¹, Masaru Hori¹ (Nagoya Univ.¹)

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