Session information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[19p-D8-1~13] 14.3 Electron devices and Process technology

Wed. Mar 19, 2014 2:00 PM - 5:30 PM D8 (D215)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:30〜14:00 (12:30 PM - 2:00 PM)

2:00 PM - 2:15 PM

[19p-D8-1] Measurement of Plasma-Induced Defects in GaN by Light Irradiate Excitation

^○（D）Takuma Takimoto¹, Seiji Nakamura¹, Tsugunori Okumura¹ (Tokyo Metropolitan Univ.¹)

2:15 PM - 2:30 PM

[19p-D8-2] Annealing Behavior of Plasma-Induced Defects including Deep Level Defects in GaN

^○（D）Takuma Takimoto¹, Seiji Nakamura¹, Tsugunori Okumura¹ (Tokyo Metropolitan Univ.¹)

2:30 PM - 2:45 PM

[19p-D8-3] Reactivation of deactivated Si-donors in plasma-expoesd n-GaN upon near-IR irradiation

^○Hiroki Yokoyama¹, Seiji Nakamura¹, Tsugunori Okumura¹ (Tokyo Metropolitan Univ.¹)

2:45 PM - 3:00 PM

[19p-D8-4] Investigation on interface traps in AlGaN/GaN heterojunction by conductance method

^○Pucheng Liu¹, Chunmeng Dou¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

3:00 PM - 3:15 PM

[19p-D8-5] Ti / C ratio and film thickness dependency of Ti/C/TiN contact resistance on AlGaN / GaN

^○Yoshihiro Matsukawa¹, Mari Okamoto¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Wataru Saito³, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, IGSSE², Toshiba corp.³)

3:15 PM - 3:30 PM

[19p-D8-6] A temperature dependent model for GaN schottky barrier diode

^○Toshiyuki Oishi¹, Yutaro Yamaguchi¹, Hiroshi Otsuka¹, Koji Yamanaka¹, Yoichi Nogami¹, Hiroshi Fukumoto¹, Yasuyuki Miyamoto² (Mitsubisi Electric¹, Tokyo Institute of Technology²)

Break 15:30〜15:45 (3:30 PM - 3:45 PM)

3:45 PM - 4:00 PM

△ [19p-D8-7] Mapping of thermal degradation of n-GaN Schottky diodes using scanning internal photoemission microscopy

^○Shingo Yamamoto¹, Yuhei Kihara¹, Kenji Shiojima¹ (Univ. of Fukui¹)

4:00 PM - 4:15 PM

△ [19p-D8-8] Properties of ohmic contact to 2DEG of AlGaN/GaN strucutres depending on AlGaN layer thickness for different contact metals

^○Yusuke Takei¹, Mari Okamoto¹, Shin Man¹, Rei Kayanuma¹, Masayuki Kamiya¹, Wataru Saito³, Kazuo Tsutsui¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Yoshinori Kataoka², Hiroshi Iwai² (Tokyo Inst. Technology¹, Tokyo Inst. Technology², Toshiba³)

4:15 PM - 4:30 PM

[19p-D8-9] Effect of annealing on properties of InAlN MOS diodes with ALD-Al₂O₃insulator layer

^○Masahito Chiba¹, Takuma Nakano¹, Masamichi Akazawa¹ (Hokkaido Univ.¹)

4:30 PM - 4:45 PM

△ [19p-D8-10] Properties of Al₂O₃/InAlN interface formed by 2-step ALD (2)

^○Takuma Nakano¹, Masahito Chiba¹, Yoichiro Odanagi¹, Masamichi Akazawa¹ (Hokkaido Univ. RCIQE¹)

4:45 PM - 5:00 PM

[19p-D8-11] Characterization of MOS Interface Properties in Al₂O₃/AlGaN/GaN Structures with Dry-etched AlGaN Surface

^○Zenji Yatabe¹, Yujin Hori¹, Tamotsu Hashizume^1,2 (RCIQE, Hokkaido Univ.¹, JST-CREST²)

5:00 PM - 5:15 PM

▲ [19p-D8-12] Interface state density, gate-control efficiency, and intrinsic transconductance of AlN/AlGaN/GaN metal-insulator-semiconductor devices

^○Hong-An SHIH¹, Masahiro Kudo¹, Tuan Quy Nguyen¹, Toshi-kazu Suzuki¹ (JAIST¹)

5:15 PM - 5:30 PM

[19p-D8-13] Analysis of metal-semiconductor interface in the formation of ohmic contact for GaN based HEMT devices

^○Mahadevaiah Gopal¹, Takako Motai¹, Akira Yoshioka², Yoshiharu Takada², Hitoshi Sugiyama¹ (Toshiba Corporation, Advanced Discrete device development center, Unit Process development dept.¹, Toshiba Corporation, Advanced Discrete device development center,Device development dept.²)

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