^○（M1）Takayuki Onaka¹, Ken Iketani¹, Yuichi Hirofuji¹, Kazuto Koike¹, Toshihiko Maemoto¹, Shigehiko Sasa¹, Mitsuaki Yano¹ (Osaka Institute of Technology¹)

4:30 PM - 4:45 PM

[19p-E10-8] Wide Band Gap Oxide TFT Fabricated by Open-Air Atmospheric Pressure Mist CVD

^○Toshiyuki Kawaharamura¹, Tadahiro Kaida², Dapeng Wang², Mamoru Furuta^2,1 (Inst. for Nanotechnology, Kochi Univ. of Tech.¹, Dept. of Env. Sci., Kochi Univ. of Tech.²)

4:45 PM - 5:15 PM

[19p-E10-9] Wide Band Gap Oxide Semiconductor System Based on Gallium Oxide

^○Shizuo Fujita¹ (Kyoto Univ.¹)

5:15 PM - 5:30 PM

[19p-E10-10] Fabrication and Characterization of 2-inch (-201) β-Ga₂O₃ Substrates

^○Takekazu Masui¹, Kimiyoshi Koshi¹, Kazuyuki Iizuka², Shinya Watanabe², Masaru Takizawa², Yu Yamaoka¹, Kei Doioka², Saori Umemura², Daiki Wakimoto², Akito Kuramata², Shigenobu Yamakoshi² (Koha Co., Ltd¹, Tamura Corp.²)

5:30 PM - 5:45 PM

[19p-E10-11] Electrical Properties of beta-Ga₂O₃ / SiC Heterojunction Diodes

^○Shinji Nakagomi¹, Yoshihiro Kokubun¹ (Ishinomaki Senshu Univ.¹)

Session information

[19p-E10-1~11] Creation of New Functional Materials by Wide-bandgap Oxide Semiconductors

△ [19p-E10-7] Fabrication and characterization of immunosensors based on a ZnO field-effect transistor