Oral presentation

16. Amorphous and Microcrystalline Materials » 16.3 Bulk, thin-film and other silicon-based solar cells

[19p-E12-1~19] 16.3 Bulk, thin-film and other silicon-based solar cells

Wed. Mar 19, 2014 1:15 PM - 6:30 PM E12 (E206)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

Lunch 11:45〜13:15 (11:45 AM - 1:15 PM)

1:15 PM - 1:30 PM

[19p-E12-1] Gas-atmosphere depended interface property between releasing coating layer and molten silicon

^○Jianyong Li¹, Karolin Jiptner², Takashi Kimura², Takashi Sekiguchi², Hirofumi Harada², Yoshiji Miyamura², Koichi Kakimoto³, Atsushi Ogura¹ (Meiji Univ.¹, NIMS², Kyushu Univ.³)

1:30 PM - 1:45 PM

[19p-E12-2] 50 cm square cast Si growth and its characterization (Ⅱ)

^○Yoshiji Miyamura¹, Hirofumi Harada¹, Jun Chen¹, Takashi Sekiguchi¹, Satoshi Nakano², Koichi Kakimoto² (NIMS¹, Kyushu Univ.²)

1:45 PM - 2:00 PM

▲ [19p-E12-3] Thermal-stress induced dislocation distribution in seed-cast and CZ Si ingots

^○Karolin Jiptner¹, Bing Gao², Yoshiji Miyamura¹, Hirofumi Harada¹, Koichi Kakimoto², Takashi Sekiguchi¹ (NIMS¹, Kyushu Univ.²)

2:00 PM - 2:15 PM

△ [19p-E12-4] Correlation between PL intensity and dislocation density in a Si crystal

^○Shunya Ninomiya¹, Kentaro Kutsukake^1,2, Yutaka Ohno¹, Momoko Deura¹, Noritaka Usami³, Ichiro Yonenaga¹ (Tohoku Univ.¹, JST PRESTO², Nagoya Univ.³)

2:15 PM - 2:30 PM

▲ [19p-E12-5] Correlation between Grain Boundary Character and Strain in Multicrystalline Silicon

^○Jun Chen¹, Masayuki Fukuzawa², Ronit Prakash^1,3, Jianyong Li^1,4, Karolin Jiptner¹, Yoshiji Miyamura¹, Hirofumi Harada¹, Takashi Sekiguchi^1,3 (NIMS¹, KIT², Univ. of Tsukuba³, Meji Univ.⁴)

Break 14:30〜14:45 (2:30 PM - 2:45 PM)

2:45 PM - 3:00 PM

△ [19p-E12-6] Polarized Photoluminescence Imaging Analysis around Small-Angle Grain Boundaries in Multicrystalline Silicon Wafers for Solar Cells

^○Gen Kato^1,2, Michio Tajima^1,2, Hiroyuki Toyota², Atsushi Ogura¹ (Meiji Univ.¹, ISAS/JAXA²)

3:00 PM - 3:15 PM

[19p-E12-7] Fe Impurity Behavior in Fe-deposited Boundary of ⁵⁷Fe-contaminated Si

^○Kiyotaka Tanaka¹, Yuji Ino¹, Yutaka Yoshida² (SIST¹, SIST²)

3:15 PM - 3:30 PM

△ [19p-E12-8] Photoluminescence analysis of impurity band in highly doped and highly compensated Si

^○Koji Tanaka^{1, 2}, Michio Tajima^{1, 2}, Hiroyuki Toyota², Atsushi Ogura¹ (Meiji Univ.¹, ISAS/JAXA²)

3:30 PM - 3:45 PM

[19p-E12-9] Electrical characterization of Si wafers using terahertz time domain spectroscopy

^○Ikuo Mizobata¹, Hidetoshi Nakanishi¹, Akira Ito¹, Kazuo Nakajima², Kohei Morishita², Ryota Murai² (Dainippon Screen Mfg.¹, Kyoto Univ.²)

3:45 PM - 4:00 PM

[19p-E12-10] Focusing Characteristic of the New MCX Lens Mounted on the New Mössbauer Microscope

^○Yuji Ino¹, Hiroyoshi Soejima¹, Kazuo Hayakawa¹, Kenichi Yukihira¹, Yoshihito Harada², Takuya Sakai³, Akio Suzuki³, Yutaka Yoshida¹ (Shizuoka Inst. Sci & Tech.¹, APCO², Hamamatsu Photonics³)

4:00 PM - 4:15 PM

[19p-E12-11] Effects of reverse bias on the stability of the impurity levels in mc-Si for solar cells

^○Masakazu Yabuki¹, Tatsuro Tokura², Yoshifumi Yamashita², Takeshi Nishikawa², Yasuhiko Hayashi² (Okayama Univ.¹, Graduate School of Natural Science and Technology, Okayama Univ.²)

Break 16:15〜16:30 (4:15 PM - 4:30 PM)

4:30 PM - 4:45 PM

△ [19p-E12-12] Emitter layer design of thermal diffusion process for N-type crystalline silicon solar cells

^○Akira Harada¹, Kyotaro Nakamura¹, Ikuo Kurachi², Kentaro Yoshioka³, Norihiro Ikeno¹, Atsushi Ogura¹ (Meiji Univ.¹, D&S Inc.², AMAYA Co., Ltd.³)

4:45 PM - 5:00 PM

[19p-E12-13] Preparation of Phosphate-Coating Paste for Doping in c-Si Solar Cells

^○（M2）Ken Fukatsu¹, Abdullah Uzum¹, Tomitarou Harada², Yasuaki Ishikawa³, Yasuharu Uraoka³, Seigo Ito¹ (Univ. of Hyogo¹, Daiwa Sangyo Co. Ltd.², NAIST³)

5:00 PM - 5:15 PM

[19p-E12-14] Effect of the difference in annealing conditions on defects and impurities in a multicrystalline Si ingot

^○Isao Takahashi¹, Joonwichien Supawan¹, Satoru Matsushima¹, Noritaka Usami¹ (Nagoya Univ.¹)

5:15 PM - 5:30 PM

[19p-E12-15] Doped layer fabricated by laser doping of Si nanoparticles analysis using Raman spectroscopy

^○Miho Momose^1,2, Yukio Furukawa² (Teijin Ltd.¹, Waseda Univ.²)

5:30 PM - 5:45 PM

[19p-E12-16] Characterizations of Laser Point Contacts for c-Si Solar Cells

^○Shunsuke Urave¹, Shinsuke Miyajima¹, Makoto Konagai^1,2 (Graduate School of Science and Engineering, Tokyo Tech.¹, PVREC, Tokyo Tech.²)

5:45 PM - 6:00 PM

[19p-E12-17] Preparation of Si solar cells using ARC layer by non-vacuum method

^○Norihisa Harano¹, Abdullah Uzum¹, Yasuaki Ishikawa², Yasuharu Uraoka², Seiya Yoshinaga², Tomitarou Harada³, Yutaka Kimura⁴, Kenji Tanimoto⁴, Seigo Ito¹ (Univ. of Hyogo¹, NAIST², Daiwa Sangyo Co. Ltd.³, Nissan Chemical Industries ltd.⁴)

6:00 PM - 6:15 PM

[19p-E12-18] Fabrication of Interdigitated Back Contact Silicon Heterojunction Solar Cells with Patterning Process using Inkjet Printing

^○Tetsuya Kaneko¹, Aiko Sato¹, Hiroshi Noge¹, Kimihiko Saitou¹, Michio Kondo^1,2 (Fukushima Univ.¹, AIST²)

6:15 PM - 6:30 PM

[19p-E12-19] Lifetime Measurement of Crystal Silicon Solar Cells Measured by Impedance Analysis

^○（M1）Hiroyuki Kanda¹, Abdullah Uzum¹, Seigo Ito¹ (Univ. of Hyogo¹)