Oral presentation

06. Thin Films and Surfaces » 6.3 Oxide-based electronics

[19p-E8-1~21] 6.3 Oxide-based electronics

Wed. Mar 19, 2014 1:15 PM - 6:45 PM E8 (E202)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45〜13:15 (11:45 AM - 1:15 PM)

1:15 PM - 1:30 PM

△ [19p-E8-1] Important Aspects of Resistive Transition of SiO2 Film Fabricated by Sputter Deposition

^○Rintaro Yamaguchi¹, Shingo Sato¹, Yasuhisa Omura¹, Kazuhiro Nakamura¹ (Kansai Univ.¹)

1:30 PM - 1:45 PM

[19p-E8-2] Consideration on Criterion of Resistive Transition of SiO2 Film Fabricated by Sputter Deposition

Rintaro Yamaguchi¹, Hirotaka Kongo¹, ^○Honfei Lu¹, Shingo Sato¹, Yasuhisa Omura¹, Kazuhiro Nakamura¹ (Kansai Univ.¹)

1:45 PM - 2:00 PM

△ [19p-E8-3] Resistive nonvolatile memory with SiC_xO_y having oxidation-reduction reaction

^○（B）Kyohei Kida¹, Takahiro Tsukamoto¹, Yoshiyuki Suda¹ (Tokyo Univ. of Agric. & Technol.¹)

2:00 PM - 2:15 PM

△ [19p-E8-4] Observation of the interfacial state of hydrogen ions migration-type ReRAM by using synchrotron radiation

^○Takeshi Notsu¹, Akihiro Hanada², Hiroki Miura¹, Satoru Kishida^1,3, Hitoshi Osawa⁴, Toshiaki Ina⁴, Motohiro Suzuki⁴, Naomi Kawamura⁴, Masaichiro Mizumaki⁴, Tomoya Uruga⁴, Yasuhiko Imai⁴, Shigeru Kimura⁴, Kentaro Kinoshita^1,3 (Tottori Univ.¹, Organization for Regional Industrial Academic Cooperation, Tottori University², Tottori Univ. Electronic Display Research Cente³, JASRI/SPring-8⁴)

2:15 PM - 2:30 PM

△ [19p-E8-5] Observation of conductive filaments in amorphous InGaZnO-based resistive switching memory

^○Keisuke Kado^1.2, Mutsunori Uenuma^1,2, Kriti Sharma^1,2, Haruka Yamazaki^1,2, Satoshi Urakawa^1,2, Yasuaki Ishikawa^1,2, Yukiharu Uraoka^1,2 (NAIST¹, CREST²)

2:30 PM - 2:45 PM

▼ [19p-E8-6] Analysis of Degradation Mechanism on Bottom Gate Amorphous InGaZnO Thin-Film Transistors with Siloxane Passivation Layer

^○（M1）Chaiyanan Kulchaisit^1,2, Yasuaki Ishikawa^1,2, Yoshihiro Ueoka^1,2, Bermundo Juan Paolo^1,2, Masahiro Horita^1,2, Yukiharu Uraoka^1,2 (NAIST¹, CREST²)

2:45 PM - 3:00 PM

△ [19p-E8-7] Electrical properties of IGZO-TFT with Al₂O₃ gate insulators by PE-ALD method

^○Kazunori Kurishima^1,2, Toshihide Nabatame^2,3, Maki Shimizu², Shinya Aikawa², Kazuhito Tsukagoshi², Akihiko Ohi², Toyohiro Chikyo², Atsushi Ogura¹ (Meiji Univ.¹, NIMS², JST-CREST³)

3:00 PM - 3:15 PM

△ [19p-E8-8] Conduction mechanism of NiO-based resistive switching cells and new insight into the difference in resistance states

^○Tatsuya Iwata¹, Yusuke Nishi¹, Hiroki Sasakura¹, Tsunenobu Kimoto¹ (Kyoto Univ.¹)

3:15 PM - 3:30 PM

[19p-E8-9] Characterization of NiO thin films by a reactive-sputtering method with a pair of facing Ni targets

^○（M1）yasuaki furuya¹, mai kawai², tokahiro nomoto², nozomu tsuboi^2,3 (Grad. School of Sci. and Tech., Niigata Univ.¹, Fac. of Eng., Niigata Univ.², Cen. for Trans. Research, Niigata Univ.³)

3:30 PM - 3:45 PM

[19p-E8-10] Ferroelectric resistive switching in metal/BaTiO₃/oxide tunnel junctions

^○Hiroyuki Yamada^1,2, Atsushi Tsurumaki-Fukuchi¹, Yasukiyo Toyosaki¹, Masaki Kobayashi³, Hironori Nakao³, Koji Horiba³, Hiroshi Kumigashira³, Shoji Ishibashi¹, Akihito Sawa¹ (AIST¹, JST-PRESTO², KEK-PF³)

3:45 PM - 4:00 PM

[19p-E8-11] Resistance-Switching Properties of Mn-Nanodots embedded SiOx Films

^○Takashi Arai¹, Chong Liu¹, Akio Ohta², Katsunori Makihara¹, Seiichi Miyazaki¹ (Nagoya Univ.¹, Nagoya Univ. VBL²)

Break 16:00〜16:15 (4:00 PM - 4:15 PM)

4:15 PM - 4:30 PM

[19p-E8-12] First-Principles Study of Resistive-Random-Access-Memories

^○Katsumasa Kamiya¹, MoonYoung Yang², Magyari-Kope Blanka³, Yoshio Nishi³, Kenji Shiraishi⁴ (Kanagawa Inst. of Tech.¹, Univ. of Tsukuba², Stanford Univ.³, Nagoya Univ.⁴)

4:30 PM - 4:45 PM

[19p-E8-13] Origin of the SET times of the Resistive Switching in Tantalum Oxide Films

^○Yoshifumi Nishi^1,2, Stephan Menzel¹, Karsten Fleck¹, Ulrich Boettger¹, Rainer Waser¹ (RWTH Aachen University¹, Toshiba R&D Center²)

4:45 PM - 5:00 PM

[19p-E8-14] Rate-limiting processes in the fast SET operation of a Cu-Ta₂O₅ atomic switch

^○Tohru Tsuruoka^1,2, Tsuyoshi Hasegawa^1,2, Ilia Valov³, Rainer Waser³, Masakazu Aono¹ (NIMS¹, JST-CREST², RWTH-Aachen³)

5:00 PM - 5:15 PM

[19p-E8-15] Development of 300mm Mass Production Sputtering Technology for ReRAM

^○Natsuki Fukuda¹, Kazunori Fukuju¹, Yutaka Nishioka¹, Koukou Suu¹ (ULVAC ISET¹)

5:15 PM - 5:30 PM

[19p-E8-16] Resistive Hysteresis and Memory Characteristics of CSD Perovskite-type ferroelectric Thin Films

^○Shimpei Fuchida¹, Shuhei Hashimoto¹, Ziyang Zhang¹, Kaoru Yamashita¹, Minoru Noda¹ (Kyoto Inst. Tech¹)

5:30 PM - 5:45 PM

[19p-E8-17] Electric double layer transistor on beta-Ga₂O₃ single crystal

^○Kazunori Ueno^1,2, Taro Hitosugi^2,3, Koji Koyama⁴ (Dept.Basic Sci.,Univ. Tokyo.¹, JST-PRESTO², WPI-AIMR, Tohoku Univ.³, Namiki precision jewel⁴)

5:45 PM - 6:00 PM

[19p-E8-18] Application of gallium oxide to electrochemical reduction of carbon dioxide

^○Takeyuki Sekimoto¹, Masahiro Deguchi¹, Satoshi Yotsuhashi¹, Yuka Yamada¹, Tatekazu Masui², Akito Kuramata³, Shigenobu Yamakoshi³ (Panasonic Corporation¹, KOHA Co., Ltd.², TAMURA Corporation³)

6:00 PM - 6:15 PM

[19p-E8-19] Control of Lattice Defects in Single-Crystal SnO2 by Mechanical Stress

^○Makoto Sakurai¹, Pradyot Koley¹, Kewei Liu², Masakazu Aono¹ (NIMS, MANA¹, Chinese Academy of Science²)

6:15 PM - 6:30 PM

[19p-E8-20] Fabrication of ZnO/LiNbO₃/ZnO stacked structures for waveguide Pockels sensors

^○Housei Akazawa¹, Toshifumi Watanabe¹, Koji Yamada¹, Tai Tsuchizawa¹, Seiichi Itabashi¹, Maasru Shimada¹, Hiroshi Fukuda¹ (NTT MI Labs.¹)

6:30 PM - 6:45 PM

[19p-E8-21] Analysis on Carrier Density of the ITO Nanoparticles using Scanning Ellipsometry

^○Ai Takenoshita¹, Junjun Jia², Takehiro Yonezawa¹, Kazuhiko Yamasaki¹, Hiromi Nakazawa¹, Yuzo Shigesato² (Mitsubishi Materials Corp.¹, Aoyama Gakuin Univ.²)