Oral presentation

13. Semiconductors A (Silicon) » 13.4 Devices/Integration Technologies

[19p-F12-1~20] 13.4 Devices/Integration Technologies

Wed. Mar 19, 2014 1:30 PM - 6:45 PM F12 (F408)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:30〜13:30 (12:30 PM - 1:30 PM)

1:30 PM - 1:45 PM

[19p-F12-1] Experimental Study on 2D-Si Layers for Future Several-nm CMOS (Ⅵ)

^○Yuusuke Nagata¹, Yuuta Nakahara¹, Yuuya Suzuki¹, Kengo Saita¹, Yuuki Nagamine¹, Takashi Aoki¹, Toshiyuki Sammejima², Tomohisa Mizuno¹ (Kanagawa Univ¹, Tokyo Univ. Agri. Tech²)

1:45 PM - 2:00 PM

[19p-F12-2] Experimental Study on 2D-Si layers for Future Several-CMOS(Ⅶ)

^○Yuta Nakahara¹, Yusuke Nagata¹, Yuya Suzuki¹, Takashi Aoki¹, Toshiyuki Sameshima², Tomohisa Mizuno¹ (Kanagawa Univ.¹, Tokyo Univ. Agri. Tech.²)

2:00 PM - 2:15 PM

[19p-F12-3] Potential Performance of SOI MOSFET Single-Photon Detector

^○Yuki Nakagami¹, Dedy Septono Catur Putranto^1,2, Hiroaki Satoh¹, Atsushi Ono¹, Purnomo Sidi Priambodo², Djoko Hartanto², Hiroshi Inokawa¹ (Shizuoka Univ.¹, Univ. of Indonesia²)

2:15 PM - 2:30 PM

[19p-F12-4] A high-speed single-electron pump using a single trap level

^○Gento Yamahata¹, Katsuhiko Nishiguchi¹, Akira Fujiwara¹ (NTT Basic Research Labs.¹)

2:30 PM - 2:45 PM

[19p-F12-5] Peak Position Control of Coulomb Oscillations in Silicon Single-Electron Transistors with Floating Gate Operating at Room Temperature

^○Yuma Tanahashi^1,2, Ryota Suzuki¹, Takuya Saraya¹, Toshiro Hiramoto¹ (Univ of Tokyo¹, Chuo Univ²)

2:45 PM - 3:00 PM

[19p-F12-6] Fabrication and characterization of Si quantum dots using SF6 dry etching technique

^○Yi Lu¹, Tetsuo Kodera^1,2,3, Kousuke Horibe¹, Shunri Oda¹ (QNERC, Tokyo Tech.¹, NanoQuine, Univ. of Tokyo², JST-PRESTO³)

3:00 PM - 3:15 PM

[19p-F12-7] Magnetic field dependence of p-Channel Si Double Quantum Dot by Hole Transport

^○Ko Yamada¹, Tetsuo Kodera^1,2,3, Tomohiro Kambara¹, Kosuke Horibe¹, Yukio Kawano¹, Shunri Oda¹ (QNERC, Tokyo Tech¹, NanoQuine, Univ. of Tokyo², JST-PRESTO³)

3:15 PM - 3:30 PM

△ [19p-F12-8] Observation of Pauli Spin Blockade in Si/SiGe Double Quantum Dots

^○Jun Kamioka¹, Kenta Takeda², Toshiaki Obata², Tetsuo Kodera^1,3,4, Seigo Tarucha^2,3,5, Shunri Oda¹ (QNERC, Tokyo Tech.¹, Tokyo Univ.², NanoQuine, Tokyo Univ.³, JST-PRESTO⁴, RIKEN⁵)

3:30 PM - 3:45 PM

△ [19p-F12-9] Analysis of electron spin resonance in Si quantum dots with local magnetic field induced by integrated anisotropic ferromagnets

^○Tomohiro Kambara¹, Tetsuo Kodera^1,2,3, Shunri Oda¹ (QNERC¹, NanoQuine, Univ. of Tokyo², JST-PRESTO³)

3:45 PM - 4:00 PM

[19p-F12-10] Charge frustration of triangular triple quantum dot with charge sensor

^○Raisei Mizokuchi¹, Tetsuo Kodera^1,2,3, Kosuke Horibe¹, Shunri Oda¹ (QNERC, Tokyo Tech¹, NanoQuine, the Univ. of Tokyo², PRESTO-JST³)

4:00 PM - 4:15 PM

[19p-F12-11] Control of coupling capacitance of double quantum dot Si-SET by using multiple-gates

^○Takafumi Uchida¹, Isamu Yoshioka¹, Hikaru Sato¹, Masashi Arita¹, Akira Fujiwara², Yasuo Takahashi¹ (IST. Hokkaido Univ.¹, NTT Basic Research Labs.²)

4:15 PM - 4:30 PM

[19p-F12-12] Creation of high functionality of three-terminal Nanodot Array device

^○Isamu Yoshioka¹, Takafumi Uchida¹, Hikaru Satou¹, Masashi Arita¹, Akira Fujiwara², Yasuo Takahashi¹ (IST. Hokkaido Univ.¹, NTT Basic Research Labs.²)

Break 16:30〜16:45 (4:30 PM - 4:45 PM)

4:45 PM - 5:00 PM

[19p-F12-13] High performance strained GeOI nMOSFETs with in-situ doped epitaxial SiGe stressors

^○Yuuichi Kamimuta¹, Yoshihiko Moriyama¹, Eiko Mieda¹, Tatsuro Maeda¹, Jevasuwan Wipakorn¹, Yuichi Kurashima², Hideki Takagi², Minoru Oda¹, Toshifumi Irisawa¹, Keiji Ikeda¹, Etsuo Kurosawa¹, Tsutomu Tezuka¹ (GNC-AIST¹, AIST²)

5:00 PM - 5:15 PM

▲ [19p-F12-14] Ultrathin body Germanium-on-insulator (GeOI) MOSFETs fabricated by transfer of epitaxial Ge films on III-V substrates

^○Xiao Yu^1,2, Rui Zhang^1,2, Jian Kang^1,2, Tatsuro Maeda³, Taro Itatani³, Takenori Osada⁴, Masahiko Hata⁴, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (Univ. of Tokyo¹, JST-CREST², AIST³, Sumitomo Chem.⁴)

5:15 PM - 5:30 PM

▲ [19p-F12-15] High Mobility Strained-Ge pMOSFETs with 0.7-nm Ultrathin EOT using Plasma Post Oxidation HfO₂/Al₂O₃/GeO_x Gate Stacks

^○（P）Rui Zhang^1,2,4, Winston Chern³, Xiao Yu^1,2, Mitsuru Takenaka^1,2, Hoyt Judy³, Shinichi Takagi^1,2 (Univ. Tokyo¹, JST CREST², MIT³, Zhejiang Univ.⁴)

5:30 PM - 5:45 PM

[19p-F12-16] Demonstration of poly-Ge short channel p- and n-MOSFETs fabricated by flash lamp annealing

^○Koji Usuda¹, Yoshiki Kamata¹, Yuuichi Kamimuta¹, Takahiro Mori¹, Masahiro Koike¹, Tsutomu Tezuka¹ (AIST-GNC¹)

5:45 PM - 6:00 PM

[19p-F12-17] Poly-Ge Normally-off Junctionless p-&n-MISFETs with Single Metal Gate

^○Yoshiki Kamata¹, Masahiro Koike¹, Yuuichi Kamimuta¹, Etsuo Kurosawa¹, Tsutomu Tezuka¹ (GNC AIST¹)

6:00 PM - 6:15 PM

[19p-F12-18] Ultra-thin GeSn pMOSFETs on Si (111) by solid phase epitaxy

^○Tatsuro Maeda¹, Wipakorn Jevasuwan¹, Hiroyuki Hattori¹, Noriyuki Uchida¹, Shu Miura², Masatoshi Tanaka², Jean Locquet³, Ruben Lieten^3,4 (AIST¹, YNU², KU Leuven³, IMEC⁴)

6:15 PM - 6:30 PM

[19p-F12-19] Examination of electrical properties of metal/GaSb junctions using metal-GaSb alloys

^○Koichi Nishi^1,2, SangHyeon Kim^1,2, Masafumi Yokoyama¹, Haruki Yokoyama³, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (Tokyo Univ.¹, JST CREST², NTT Photonics Lab.³)

6:30 PM - 6:45 PM

[19p-F12-20] GaSb-OI p-MOSFETs on Si fabricated by direct wafer bonding technology

^○Masafumi Yokoyama¹, Koichi Nishi^1,2, Haruki Yokoyama³, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (Univ. of Tokyo¹, JST CREST², NTT Photonics Labs.³)