^○Naohisa Inoue^1,5, Yasunori Goto², Hirofumi Seki³, Kaori Watanabe⁴, Yuichi Kawamura⁵ (Tokyo Univ. Agr. & Technol.¹, Toyota Motor Co.², Toray Research Center³, Systems Engineering Inc.⁴, Osaka Pref. Univ.⁵)

3:15 PM - 3:30 PM

[19p-F9-9] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (7) Detection of dark matters and UFO– Infrared defect astronomy

^○Naohisa Inoue^1,5, Yasunori Goto², Hirofumi Seki³, Kaori Watanabe⁴, Yuichi Kawamura⁵ (Tokyo Univ. Agr. & Technol.¹, Toyota Motor Co.², Toray Research Center³, Systems Engineering Inc.⁴, Osaka Pref. Univ.⁵)

3:30 PM - 3:45 PM

[19p-F9-10] Proximity Gettering of Carbon Cluster Ion Irradiated Silicon Wafers (1) - Gettering Effects on Transition Metal Impurities -

^○Kazunari Kurita¹, Takeshi Kadono¹, Ryousuke Okuyama¹, Takurou Iwanaga¹, Yoshihiro Koga¹, Hidehiko Okuda¹ (SUMCO CORPORATION¹)

3:45 PM - 4:00 PM

△ [19p-F9-11] Carbon Cluster Ion Irradiated Silicon Wafers(2) -Effects of Amount and Size of Carbon Cluster on Defects Formation-

^○Ryosuke Okuyama¹, Takeshi Kadono¹, Takuro Iwanaga¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (SUMCO Corporation¹)

4:00 PM - 4:15 PM

△ [19p-F9-12] Proximity Gettering of Carbon Cluster Ion Irradiated Silicon Wafers (3) -Effect on Transition Metal Impurities Gettering of p/p+ Epitaxial Silicon Wafers-

^○Takuro Iwanaga¹, Takeshi Kadono¹, Ryosuke Okuyama¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (SUMCO CORPORATION¹)

Break 16:15〜16:30 (4:15 PM - 4:30 PM)

4:30 PM - 4:45 PM

[19p-F9-13] Effects of Light Element Ion Beam Implantation on Transition Metal Impurities Proximity Gettering of Silicon Wafers

^○Yoshihiro Koga¹, Kazunari Kurita¹, Hidehiko Okuda¹, Takeshi Kadono¹, Ryousuke Okuyama¹, Takurou Iwanaga¹ (SUMCO CORPORATION¹)

4:45 PM - 5:00 PM

[19p-F9-14] Influence of impurities on the annealing kinetics of defects in Silicon irradiated with low dose electron

^○Akira Kiyoi¹, Masayuki Tanaka¹, Tsuyoshi Kawakami¹, Hirozo Tsuruta¹, Junji Tanimura¹, Tadaharu Minato², Tarutani Masayoshi², Kazutoyo Takano³ (Mitsubishi Electric Co. Advanced Technology R&D Lab¹, Mitsubishi Electric Co. Power Device Works², Melco Semiconductor Engineering³)

5:00 PM - 5:15 PM

[19p-F9-15] A Considerations of 300mm Silicon Wafer for Power Devices

^○Hidekazu Yamamoto¹ (Chiba Inst. of Tech.¹)

5:15 PM - 5:30 PM

[19p-F9-16] Dislocation glide motion in various SiGe epi-films doped with Sb

^○Shinya Maki¹, Tatsuya Fushimi², Yoshifumi Yamashita², Yutaka Ohno³, Ichirou Yonenaga³, Takeshi Nishikawa², Yasuhiko Hayashi² (okayamadaikou¹, okayamadaiinshizen², touhokudaigakukinken³)

5:30 PM - 5:45 PM

△ [19p-F9-17] Effects of Tin on Defects in Germanium Single Crystal

^○Wakana Takeuchi¹, Noriyuki Taoka¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya Univ.¹)

Session information

[19p-F9-1~17] 15.8 Crystal evaluation, impurities and crystal defects

[19p-F9-1] Effect of thermal stress on critical v/G value in growing single crystal Si

[19p-F9-2] Thermal stress induced void formation near defect free silicon crystal growth condition

[19p-F9-3] Thermal stress induced void formation near defect free silicon crystal growth condition and implications for 450 mm wafer inspection

[19p-F9-4] Activation energy of self-diffusion with vacancy mechanism in Si crystals

[19p-F9-5] The mechanism of dopant diffusion in Si crystals

[19p-F9-6] Diffusivity of Oxygen Enhanced by Boron in Silicon Crystals

[19p-F9-7] Relation between CZ Silicon Lattice Spacing And It's Oxygen Concentration

[19p-F9-8] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (6) Behavior of VO and CiOi in irradiation and annealing