Session information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[20a-D8-1~11] 14.3 Electron devices and Process technology

Thu. Mar 20, 2014 9:00 AM - 12:00 PM D8 (D215)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[20a-D8-1] Band Offsets of NO2-Exposed H-Terminated Diamond/Al2O3 Interface Determined by Synchrotron Radiation XPS/UPS/XANES

^○Makoto Kasu¹, Kaxzutoshi Takahashi², Masayuki Imamura², Kazuyuki Hirama³ (Saga Univ.¹, Synchrotron Light Application Center, Saga Univ², NTT Basic Research Labs³)

9:15 AM - 9:30 AM

△ [20a-D8-2] Capacitance-Voltage Characteristics of Diamond MOSFET

^○（B）Kazuya Harada¹, Kazuyuki Hirama², Makoto Kasu¹ (Saga Univ.¹, NTT BRL.²)

9:30 AM - 9:45 AM

[20a-D8-3] Depletion-mode Ga₂O₃ metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated by using Si-ion implantation

^○Masataka Higashiwaki¹, Kohei Sasaki^2,1, Wong Man Hoi¹, Takafumi Kamimura¹, Krishnamurthy Daivasigamani¹, Akito Kuramata², Takekazu Masui³, Shigenobu Yamakoshi² (NICT¹, Tamura Corp.², Koha Co., Ltd.³)

9:45 AM - 10:00 AM

▼ [20a-D8-4] Electron mobility of Sn-doped and Si-implanted n-type β-Ga₂O₃

^○Man Hoi Wong¹, Takafumi Kamimura¹, Kohei Sasaki^2,1, Krishnamurthy Daivasigamani¹, Akito Kuramata², Takekazu Masui³, Shigenobu Yamakoshi², Masataka Higashiwaki¹ (NICT¹, Tamura Corp.², Koha Co., Ltd.³)

10:00 AM - 10:15 AM

[20a-D8-5] Electron mobility and concentration of β-Ga₂O₃ single crystal

^○（B）Kazuya Harada¹, Akikazu Matsunaga¹, Kazuyuki Iizuka², Kimiyoshi Koshi², Akihito Kuramata², Makoto Kasu¹ (Saga Univ.¹, Tamura Corp.²)

Break 10:15〜10:30 (10:15 AM - 10:30 AM)

10:30 AM - 10:45 AM

△ [20a-D8-6] Visualization of depletion layer in SiC-DMOSFET using super-higher-order nonlinear dielectric microscopy

^○Norimichi Chinone¹, Takashi Nakamura², Yasuo Cho¹ (RIEC, Tohoku Univ.¹, ROHM Co., Ltd.²)

10:45 AM - 11:00 AM

[20a-D8-7] Interface reaction analysis of La2O3/SiC upon annealing by ATR-FTIR

^○Yiming Lei¹, Shu Munekiyo¹, Kuniyuki Kakushima¹, Takamasa Kawanago², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui¹, Satoshi Yamakawa³, Hiroshi Iwai¹, Masayuki Huruhashi³, Naruhisa Miura³, Kenji Natori¹ (Tokyo Tech.FRC¹, Tokyo Tech.IGSSE², Mitsubishi Electric Corp.³)

11:00 AM - 11:15 AM

[20a-D8-8] C-V characteristics of SiC-MOS capacitors with La-silicate interfacial layer

^○Shu Munekiyo¹, Yiming Lei¹, Kuniyuki Kakushima¹, Takamasa Kawanago², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui¹, Satoshi Yamakawa³, Kenji Natori¹, Hiroshi Iwai¹, Masayuki Huruhashi³, Naruhisa Miura³ (Tokyo Tech.FRC¹, Tokyo Tech.IGSSE², Mitsubishi Electric Corp.³)

11:15 AM - 11:30 AM

△ [20a-D8-9] High mobility III-V n-type and p-type field-effect transistors on a Si/SiO2 substrate

^○Kuniharu Takei^1,2, Steven Chuang², Hui Fang², Morten Madsen², Junghyo Nah², Rehan Kapadia², Ali Javey² (Osaka Prefecture University¹, University of California, Berkeley²)

11:30 AM - 11:45 AM

△ [20a-D8-10] Impact of T-gate Stem Height on Parasitic Gate Delay Time in InGaAs-HEMTs

^○Tomohiro Yoshida¹, Kengo Kobayashi¹, Shinya Hatakeyama¹, Taiichi Otsuji¹, Tetsuya Suemitsu¹ (RIEC, Tohoku Univ.¹)

11:45 AM - 12:00 PM

▲ [20a-D8-11] Enhancement of Breakdown Voltages in InP-based HEMTs with Tri-Layer Channel Structure

^○Amine El Moutaouakil¹, Hiroki Sugiyama¹, Hideaki Matsuzaki¹ (NTT Photonics Laboratories¹)

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