[20a-F12-1~13] 13.4 Devices/Integration Technologies

Thu. Mar 20, 2014 9:00 AM - 12:30 PM F12 (F408)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[20a-F12-1] Fabrication and Characterization of the charge trapping type FinFET flash memories with a high-k Al2O3 blocking layer

^○Yongxun Liu¹, Toshihide Nabatame², Takashi Matsukawa¹, Kazuhiko Endo¹, Shinichi Ouchi¹, Jyunichi Tsukada¹, Hiromi Yamauchi¹, Yuki Ishikawa¹, Wataru Mizubayashi¹, Yukinori Morita¹, Shinji Migita¹, Hiroyuki Ota¹, Toshihiro Chikiyow², Meishoku Masahara¹ (AIST¹, NIMS²)

9:15 AM - 9:30 AM

[20a-F12-2] An Optimum Asymmetric Coding Strategy to Improve Program-Disturb Error in 2X, 3X and 4Xnm NAND Flash Memories

^○（M1）Masafumi Doi¹, Shuhei Tanakamaru^1,2, Ken Takeuchi¹ (Chuo Univ.¹, Univ. of Tokyo²)

9:30 AM - 9:45 AM

[20a-F12-3] Controller Technologies for Highly Reliable TLC NAND Flash Memory

^○（B）Tsukasa Tokutomi¹, Shuhei Tanakamaru^1,2, Ken Takeuchi¹ (Chuo Univ.¹, Univ. of Tokyo.²)

9:45 AM - 10:00 AM

[20a-F12-4] Switching characteristics of Cu-MoO_x-Al₂O₃ReRAM

^○Takahiro Hiroi¹, Akitoshi Nakane¹, Takashi Fujimoto¹, Masashi Arita¹, Yasuo Takahashi¹, Hideyuki Ando², Takashi Morie² (Graduate School of IST, Hokkaido Univ.¹, Graduate School of LSSE, Kyushu Institute of Technology²)

10:00 AM - 10:15 AM

[20a-F12-5] Study on resistance switching of WOx film prepared on an Al electrode

^○Akitoshi Nakane¹, Takahiro Hiroi¹, Masashi Arita¹, Yasuo Takahashi¹, Hideyuki Ando², Takashi Morie² (Graduate of IST,Hokkaido Univ.¹, Kyushu Inst.Technol²)

10:15 AM - 10:30 AM

[20a-F12-6] In-situ TEM observation of WO_x ReRAMs with Cu Top Electrodes

^○Akihito Takahashi¹, Yuuki Ohno¹, Akitoshi Nakane¹, Masaki Kudo¹, Kouichi Hamada¹, Masashi Arita¹, Yasuo Takahashi¹ (Graduate School of IST, Hokkaido Univ.¹)

10:30 AM - 10:45 AM

[20a-F12-7] Filament formation during repeatedly resistive switching of Cu / MoOx ReRAMs

^○Masaki Kudo¹, Yuuki Ohno¹, Takahiro Hiroi¹, Takashi Fujimoto², Kouichi Hamada¹, Masashi Arita¹, Yasuo Takahashi¹ (Graduate School of IST, Hokkaido Univ.¹, Faculty of Eng. , Hokkaido Univ.²)

Break 10:45〜11:00 (10:45 AM - 11:00 AM)

11:00 AM - 11:15 AM

▲ [20a-F12-8] Verify-Program Method Investigation and Optimization on 50nm AlxOy ReRAM Array

^○Sheyang Ning^1,2, Ogura Tomoko Iwasaki¹, Ken Takeuchi¹ (Chuo Univ.¹, Univ. of Tokyo²)

11:15 AM - 11:30 AM

▲ [20a-F12-9] Investigation of AlxOy ReRAM Cell Resistance Switch Characteristic

^○Sheyang Ning^1,2, Ogura Tomoko Iwasaki¹, Ken Takeuchi¹ (Chuo Univ.¹, Univ. of Tokyo²)

11:30 AM - 11:45 AM

[20a-F12-10] Controller Technologies for Highly Reliable and High Performance ReRAM

^○（B）Hiroki Yamazawa¹, Shuhei Tanakamaru^1,2, Ken Takeuchi¹ (Chuo Univ.¹, Univ. of Tokyo²)

11:45 AM - 12:00 PM

△ [20a-F12-11] Three-Terminal One-Time Programmable Switch Using CMOS Transistor

^○Koichiro Zaitsu¹, Kosuke Tatsumura¹, Masato Oda¹, Shinichi Yasuda¹ (Toshiba Corp.¹)

12:00 PM - 12:15 PM

[20a-F12-12] Switching Operation of Bidirectional TaO Diode-selected Complementary Atom Switches (DCAS) for Area-efficient Crossbar Switch

^○Koichiro Okamoto¹, Munehiro Tada¹, Naoki Banno¹, Toshitsugu Sakamoto¹, Noriyuki Iguchi¹, Tatsuhiko Nohisa¹, Hiromitsu Hada¹ (LEAP¹)

12:15 PM - 12:30 PM

[20a-F12-13] Bias-stress Reliability of OFF-state Complementary Atom Switch

^○Naoki Banno¹, Munehiro Tada¹, Toshitsugu Sakamoto¹, Makoto Miyamura¹, Koichiro Okamoto¹, Noriyuki Iguchi¹, Tatsuhiko Nohisa¹, Hiromitsu Hada¹ (LEAP¹)