[20p-E13-1~8] 15.4 III-V-group nitride crystals

Thu. Mar 20, 2014 1:00 PM - 3:00 PM E13 (E301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45〜13:00 (11:45 AM - 1:00 PM)

1:00 PM - 1:15 PM

△ [20p-E13-1] Optical characteristics of InGaN films grown by pulsed sputtering

^○Kohei Ueno¹, Hidenari Noguchi², Jitsuo Ohta², Hiroshi Fujioka^2,3, Masaharu Oshima¹ (The Univ. of Tokyo¹, IIS, The Univ. of Tokyo², JST-CREST³)

1:15 PM - 1:30 PM

[20p-E13-2] Dependence of radiative and nonradiative recombination lifetime on excitation energy density in InGaN/GaN multiple quantum wells

^○Hideaki Murotani¹, Toko Sugiura¹, Yoichi Yamada², Yoshio Honda³, Hiroshi Amano³ (Toyota Natl. Coll. Technol.¹, Yamaguchi Univ.², Nagoya Univ.³)

1:30 PM - 1:45 PM

△ [20p-E13-3] Spatial distribution of photoluminescence in InGaN single quantum wells on semipolar (11\overline{2}2) GaN substrates assessed by scanning near field optical microscopy

^○Takuya Ozaki¹, Junichi Nishinaka¹, Akio Kaneta¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

1:45 PM - 2:00 PM

[20p-E13-4] Observation of ultra fast dynamics in InN films by degenerated pump and probe technique

^○Daichi Imai¹, Ken Morita¹, Katsuki Tsukahara¹, Yoshihiro Ishitani¹, Bei Ma¹, Xinqiang Wang², kazuhide Kusakabe³, Akihiko Yoshikawa³ (Chiba. Univ¹, Peking Univ.², Chiba Univ. SMART³)

2:00 PM - 2:15 PM

△ [20p-E13-5] Carrier and phonon transport properties in determination of nonradiative carrier recombination rate in InN

^○Daichi Imai¹, Yoshihiro Ishitani¹, Xinqiang Wang², Kazuhide Kusakabe³, Akihiko Yoshikawa³, Ken Morita¹, Bei Ma¹ (Graduate school of Engineering, Chiba Univ.¹, School of Physics, Peking Univ.², Center for SMART GIR, Chiba Univ.³)

2:15 PM - 2:30 PM

△ [20p-E13-6] Raman measurements of GaN outer most surface use of electrical field enhancement effect obtained by Ag nanoparticles

^○Ryosuke Imai¹, Daisuke Kosemura¹, Siti Norhidayah Mohd Yusoff¹, Takahiro KIjima¹, Shotaro Yamamoto¹, Atsushi Ogura¹ (Meiji Univ¹)

2:30 PM - 2:45 PM

[20p-E13-7] Direct Measurement of Carrier Dynamics in GaN by Time-resolved PL Spectroscopy

^○Hitoshi Manabe¹, Kohei Kawakami¹, Hiroki Goto², Haruo Sunakawa², Toshiharu Matsueda², Akiko Okada³, Hidetoshi Shinohara⁴, Hiroshi Goto⁴, Jun Mizuno³, Akira Usui², A. Atsushi Yamaguchi¹ (Kanazawa Inst. of Tech.¹, Furukawa Co. Ltd.², Waseda Univ.³, Toshiba Machine Co. Ltd.⁴)

2:45 PM - 3:00 PM

[20p-E13-8] Analysis of exciton momentum and recombination processes in GaN based on phonon replica spectra

^○Kenji Takahashi¹, Kei Gotou¹, Daichi Imai¹, Ken Morita¹, Yoshihiro Ishitani¹, Hideto Miyake², Kazumasa Hiramatsu², Bei Ma¹ (Chiba Univ.¹, Mie Univ.²)