[20p-E8-1~8] 6.3 Oxide-based electronics

Thu. Mar 20, 2014 1:00 PM - 3:00 PM E8 (E202)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:30〜13:00 (11:30 AM - 1:00 PM)

1:00 PM - 1:15 PM

[20p-E8-1] Li-ion-conducting properties of all-solid-state Li-ion battery with clean electrolyte/electrode interface

^○Masakazu Haruta¹, Tohru Suzuki¹, Yoshitaka Takagi¹, Ryota Shimizu¹, Susumu Shiraki¹, Taro Hitosugi¹ (AIMR Tohoku Univ.¹)

1:15 PM - 1:30 PM

[20p-E8-2] Sodium Ion Diffusion in Layered Na_xMnO₂

^○Takayuki Shibata¹, Wataru Kobayashi^1,2, Yutaka Moritomo^1,2 (Univ. of Tsukuba¹, TIMS²)

1:30 PM - 1:45 PM

[20p-E8-3] Sputter all-solid electrolyte lithium-ion battery

^○Kadzuma Okamoto¹, Fumiya Kurokawa¹, Hirotaka Hida¹, Isaku Kanno¹, Minoru Mizuhata¹ (Kobe Univ.¹)

1:45 PM - 2:00 PM

[20p-E8-4] Modulation of superconducting transition temperature of LiTi₂O₄ thin films by ionic liquid gating

^○Shingo Maruyama^1,2, Shin Jongmoon¹, Zhang Xiaohang¹, Kui Jin¹, Suchoski Richard¹, Shintaro Yasui^1,3, Yuji Matsumoto², Greene Richard¹, Ichiro Takeuchi¹ (Univ. of Maryland¹, Tohoku Univ.², Tokyo Tech³)

2:00 PM - 2:15 PM

[20p-E8-5] First-Principles Simulations of Oxygen Ionic Conduction in Rare-Earth-Based Fast Ion Conductors

^○Mamoru Sakaue¹, Hideaki Kasai¹, Tatsumi Ishihara², Takahiro Mohri³ (Osaka Univ.¹, Kyushu Univ.², Konica Minolta³)

2:15 PM - 2:30 PM

[20p-E8-6] Fabrication of all-solution processed oxide TFTs with channel stopper structure

^○Yuuki Yoshimoto¹, Tue Phan Trong^2,3, Tomoko Hori², Satoshi Inoue^2,3, Tatsuya Shimoda^1,2,3 (JAIST¹, GDRC², JST-ERATO³)

2:30 PM - 2:45 PM

[20p-E8-7] A Nonvolatile Programmable Switch for FPGA utilizing CAAC-OS FET

^○Takashi Nakagawa¹, Yuki Okamoto¹, Takeshi Aoki¹, Masataka Ikeda¹, Munehiro Kozuma¹, Takeshi Osada¹, Yoshiyuki Kurokawa¹, Takayuki Ikeda¹, Naoto Yamade¹, Yutaka Okazaki¹, Hidekazu Miyairi¹, jun koyama¹, Shunpei Yamazaki¹ (SEL¹)

2:45 PM - 3:00 PM

[20p-E8-8] Hysteretic DC-DC Converter Operable at high temperature of 150℃ by use of CAAC-OS FETs

^○Masami Endo¹, Kei Takahashi¹, Takeshi Osada¹, Takashi Nakagawa¹, Yuki Okamoto¹, Takuro Ohmaru¹, Kazunori Watanabe¹, Takehisa Sato¹, Naoto Yamade¹, Yasutaka Suzuki¹, Takayuki Ikeda¹, Jun Koyama¹, Shunpei Yamazaki¹ (SEL¹)

Session information

[20p-E8-1~8] 6.3 Oxide-based electronics