^○（M1）Takayuki Onaka¹, Ken Iketani¹, Yuichi Hirofuji¹, Kazuto Koike¹, Toshihiko Maemoto¹, Shigehiko Sasa¹, Mitsuaki Yano¹ (Osaka Institute of Technology¹)

4:30 PM - 4:45 PM

[19p-E10-8] Wide Band Gap Oxide TFT Fabricated by Open-Air Atmospheric Pressure Mist CVD

^○Toshiyuki Kawaharamura¹, Tadahiro Kaida², Dapeng Wang², Mamoru Furuta^2,1 (Inst. for Nanotechnology, Kochi Univ. of Tech.¹, Dept. of Env. Sci., Kochi Univ. of Tech.²)

4:45 PM - 5:15 PM

[19p-E10-9] Wide Band Gap Oxide Semiconductor System Based on Gallium Oxide

^○Shizuo Fujita¹ (Kyoto Univ.¹)

5:15 PM - 5:30 PM

[19p-E10-10] Fabrication and Characterization of 2-inch (-201) β-Ga₂O₃ Substrates

^○Takekazu Masui¹, Kimiyoshi Koshi¹, Kazuyuki Iizuka², Shinya Watanabe², Masaru Takizawa², Yu Yamaoka¹, Kei Doioka², Saori Umemura², Daiki Wakimoto², Akito Kuramata², Shigenobu Yamakoshi² (Koha Co., Ltd¹, Tamura Corp.²)

5:30 PM - 5:45 PM

[19p-E10-11] Electrical Properties of beta-Ga₂O₃ / SiC Heterojunction Diodes

^○Shinji Nakagomi¹, Yoshihiro Kokubun¹ (Ishinomaki Senshu Univ.¹)

Sessions

Symposium planned by Program Committee » Creation of New Functional Materials by Wide-bandgap Oxide Semiconductors

[19p-E10-1~11] Creation of New Functional Materials by Wide-bandgap Oxide Semiconductors

[19p-E10-1] Construction of Noble Functionality in Wide Bandgap Oxide Semiconductors

[19p-E10-2] Development of Oxide Semiconductors towards Ultimate Functional Materials: Deciphering Why the Structure of Matter is as It is

[19p-E10-3] Creation of Optical & Electrical Function on Oxide Semiconductors -Oxide Plasmonics-

[19p-E10-4] Synthesis of Iron Oxide-Based Magnetic Semiconductor Thin Films-Functional Materials Obtained from Minerals-

[19p-E10-5] Nanotechnology for closing-up the oxide surfaces and interfaces