[17a-F11-1~11] 9.3 Nanoelectronics

△ [17a-F11-8] Hysteresis characteristics of GaAs-based etched nanowire MISFETs

^○ryota Kuroda^1,2, Seiya Kasai^1.2 (Hokkaido Univ.¹, RCIQE²)

Keywords:GaAsナノワイヤ,ヒステリシス特性,雑音