[17a-PA4-1~18] 16.3 Bulk, thin-film and other silicon-based solar cells

[17a-PA4-5] Influence of Low-Temperature Doping on Minority Carrier Lifetime in a-Si/c-Si Hetero-Junction Diodes

^○Shogo Tsuzaki^1,2, Koichi Koyama^1,2, Keisuke Ohdaira^1,2, Hideki Matsumura^1,2 (JAIST¹, JST CREST²)

Keywords:ヘテロ接合,低温ドーピング,少数キャリア寿命