[17p-E11-1~15] 15.3 III-V-group epitaxial crystals

[17p-E11-15] Effect of crystal growth method on the microstructure of nitrogen-related localized state in GaAsN thin film

^○（D）Wen Ding¹, Goshi Morioka¹, Naoki Fujita¹, Akio Suzuki¹, Hidetoshi Suzuki¹, Atsuhiko Fukuyama¹, Masahito Yamaguchi², Tetso Ikari¹ (Univ. of Miyazaki¹, Toyota Technological Inst.²)

Keywords:GaAsN,結晶成長方法,局在電子準位