[17p-E13-1~18] 15.4 III-V-group nitride crystals

[17p-E13-13] Fabrication of GaN nanostructures by hydrogen environment anisotropic thermal etching (HEATE) technique

^○（B）Ryo Hachiya¹, Akihiko Kikuchi¹, Hiroki Hachiya¹, Ryo Kita¹ (Sophia University¹)

Keywords:GaN,etching