MOCVD growth of GaN/Al<sub>x</sub>Ga<sub>1-x</sub>N (x &lt; 0.25) quantum dots formed by interface fluctuation

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Mon. Mar 17, 2014 1:00 PM - 6:00 PM E13 (E301)

5:15 PM - 5:30 PM

^○Munetaka Arita¹, Taichi Iki², Satoshi Kako², Yasuhiko Arakawa^1,2 (NanoQuine, Univ.of Tokyo¹, IIS, Univ. of Tokyo²)

Keywords:量子ドット