[17p-E5-1~13] 15.6 IV-group-based compounds

[17p-E5-1] Effect of epi growth for SORI of 150mm diameter SiC wafer

^○Chiaki Kudou^1,2, Sachiko Ito⁵, Keiko Masumoto^1,5, Hirokuni Asamizu^1,3, Kentaro Tamura^1,3, Johji Nishio^1,4, Kazutoshi Kojima^1,5, Toshiyuki Ohno^1,6 (FUPET¹, Panasonic², ROHM³, Toshiba⁴, AIST⁵, Hitach⁶)

Keywords:SiC,反り,基板