[17p-E5-1~13] 15.6 IV-group-based compounds

[17p-E5-2] Validity evaluation of C-face quasi-growth experiments of 4H-SiC by 150mm-diameter wafers

^○Johji Nishio^1,2, Chiaki Kudou^1,3, Sachiko Ito⁴, Keiko Masumoto^1,4, Hirokuni Asamizu^1,5, Kentaro Tamura^1,5, Kazutoshi Kojima^1,4, Toshiyuki Ohno^1,6 (FUPET¹, Toshiba Corp.², Panasonic Corp.³, AIST⁴, ROHM Co., Ltd.⁵, Hitachi, Ltd.⁶)

Keywords:SiC,C面,大口径