[17p-F4-1~13] 7.6 Ion beams

[17p-F4-5] Room-temperature oxidation and planarization of 4H-SiC surface by GCIB

^○Ryo Hinoura¹, Akira Yamaguchi¹, Makoto Kojima¹, Noriaki Toyoda¹, Ken-ichi Hara², Isao Yamada¹ (Graduate school of engineering, Univ. of Hyogo¹, Tokyo Electron Limited²)

Keywords:ガスクラスターイオンビーム