[17p-PG2-1~23] 6.3 Oxide-based electronics

[17p-PG2-1] Carrier type dependence on spatial asymmetry of unipolar resistive switching of metal oxides

^○Kazuki Nagashima¹, Takeshi Yanagida¹, Masaki Kanai¹, Umberto Celano², Sakon Rahong¹, Gang Meng¹, Fuwei Zhuge¹, Yong He¹, Bae Ho Park³, Tomoji Kawai^1,3 (ISIR Osaka Univ.¹, imec², Konkuk Univ.³)

Keywords:抵抗変化