Influence of atmosphere and temperature on crystallization of PLD grown Ga<sub>2</sub>O<sub>3</sub> thin films

Daishi Shiojiri

Presentation information

Poster presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » Nanocarbon Technology

[17p-PG3-1~30] Nanocarbon Technology

Mon. Mar 17, 2014 4:00 PM - 6:00 PM PG3 (G棟2階)

4:00 PM - 6:00 PM

△ [17p-PG3-4] Influence of atmosphere and temperature on crystallization of PLD grown Ga₂O₃ thin films

^○Daishi Shiojiri¹, Akira Yoshida¹, Nobuo Tsuchimine², Keiko Ogai³, Tokuo Yodo⁴, Satoru Kaneko^{5, 1}, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (Tokyo Inst. of Tech.¹, TOSHIMA Manu. Co., Ltd.², APCO Ltd.³, Osaka Inst. of Tech.⁴, Kanagawa Ind. Tech. Center⁵)

Keywords:酸化ガリウム,パルスレーザー堆積法,結晶成長

Presentation information

[17p-PG3-1~30] Nanocarbon Technology

△ [17p-PG3-4] Influence of atmosphere and temperature on crystallization of PLD grown Ga2O3 thin films

△ [17p-PG3-4] Influence of atmosphere and temperature on crystallization of PLD grown Ga₂O₃ thin films