[18a-E1-1~6] Developments and Challenges for Resistance Change Memories Technology (抵抗変化メモリ技術の発展及び課題）

▲ [18a-E1-6] Switching Mechanism of Resistance Random Access Memory Based on the First-Principles Calculations（15分）

^○山崎隆浩¹，大野隆央^1,2 (物材研¹，東大生産研²)

キーワード：ReRAM,CBRAM