Calculation for mechanism of N-type behavior in InGaZnO

Presentation information

Oral presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » Nanocarbon Technology

Tue. Mar 18, 2014 9:00 AM - 11:45 AM E10 (E204)

11:30 AM - 11:45 AM

^○Motoki Nakashima¹, Takuya Hirohashi¹, Masahiro Takahashi¹, Shunpei Yamazaki¹ (Semiconductor Energy Laboratory Co., Ltd.¹)

Keywords:InGaZnO,第一原理計算