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15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

[18a-E11-1~8] 15.3 III-V-group epitaxial crystals

Tue. Mar 18, 2014 9:30 AM - 11:45 AM E11 (E205)

9:45 AM - 10:00 AM

[18a-E11-2] MBE growth and characterization of laser-quality GaAs_1-xBi_x

^○（M1）Ryo Yoshioka¹, Takuma Fuyuki¹, Masahiro Yoshimoto¹ (Kyoto Inst. Tech.¹)

Keywords:GaAsBi,分子線エピタキシー,レーザ