The 61st JSAP Spring Meeting, 2014

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15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

[18a-E11-1~8] 15.3 III-V-group epitaxial crystals

Tue. Mar 18, 2014 9:30 AM - 11:45 AM E11 (E205)

10:15 AM - 10:30 AM

[18a-E11-4] optical properties of InGaAs and InAlAs layers grown on (775) B InP substrate by MBE and indium composition dependence.

○Shun Morisada1 (Ehime Univ.1)

Keywords:半導体,レーザ