[18a-E13-1~11] 15.4 III-V-group nitride crystals

▲ [18a-E13-11] Selective growth of N-face GaN (000-1) by group-III-source flow-rate modulation epitaxy

^○Chia-Hung Lin¹, Tetsuya Akasaka¹, Hideki Yamamoto¹ (NTT BRL¹)

Keywords:N-face GaN