The 61st JSAP Spring Meeting, 2014

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[18a-E13-1~11] 15.4 III-V-group nitride crystals

Tue. Mar 18, 2014 9:00 AM - 12:00 PM E13 (E301)

11:45 AM - 12:00 PM

[18a-E13-11] Selective growth of N-face GaN (000-1) by group-III-source flow-rate modulation epitaxy

Chia-Hung Lin1, Tetsuya Akasaka1, Hideki Yamamoto1 (NTT BRL1)

Keywords:N-face GaN