[18a-E13-1~11] 15.4 III-V-group nitride crystals

[18a-E13-2] Structural characterization of GaN grown with buffer layers on graphene/Si (100) substrate by RF-MBE

^○Tsutomu Araki¹, Satoru Uchimura¹, Yasushi Nanishi^2,3, Tatsuya Fujishima⁴, Tomás Palacios⁴, Amaia Zurutuza⁵ (Ritsumeikan Univ., Dept. of Photonics¹, R-GIRO², Seoul National Univ.³, Massachusetts Institute of Technology⁴, Graphenea⁵)

Keywords:GaN,グラフェン,MBE