Influence of AlAs cap on photoluminescence of InAs quantum dots grown on (001) and (113)B GaAs substrates by molecular beam epitaxy

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.2 Ultrathin films and quantum nanostructures

Tue. Mar 18, 2014 9:15 AM - 11:45 AM E15 (E303)

9:15 AM - 9:30 AM

^○Xiangmeng Lu¹, Shuzo Matsubara¹, Yoshinori Nakagawa^1,2, Takahiro Kitada¹, Toshiro Isu¹ (Univ. of Tokushima¹, NICHIA Corp²)

Keywords:量子ドット,AlAsキャップ,フォトルミネッセンス