The 61st JSAP Spring Meeting, 2014

Presentation information

Oral presentation

06. Thin Films and Surfaces » 6.3 Oxide-based electronics

[18a-E8-1~10] 6.3 Oxide-based electronics

Tue. Mar 18, 2014 9:00 AM - 11:45 AM E8 (E202)

10:30 AM - 10:45 AM

[18a-E8-6] An improvement in growth of VO2 crystal and transition characteristic by TiN conductive buffer layer

Suruz Mian Md.1, Okimura Kunio1 (Tokai Univ.1)

Keywords:二酸化バナジウム,窒化チタン導電バッファー層,転移特性