Enhancement of direct transition luminescence of n-type doped Ge-on-insulator layer fabricated by lateral liquid-phase epitaxy

Presentation information

Oral presentation

15. Crystal Engineering » 15.5 IV-group crystals and IV-IV-group mixed crystals

Tue. Mar 18, 2014 9:00 AM - 12:15 PM F6 (F306)

11:30 AM - 11:45 AM

^○Keiko Kajimura¹, Masahiro Matsue¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka Univ.¹)

Keywords:LLPE,GOI,PL