Study of the pre-deposition treatment for Al<sub>2</sub>O<sub>3</sub>/GaSb MOS structures

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.2 Insulator technology

Tue. Mar 18, 2014 1:30 PM - 5:30 PM D8 (D215)

4:15 PM - 4:30 PM

^○（M1）Takahiro Gotow^1,2, Sachie Fujikawa¹, Hiroki I. Fujishiro¹, Mutsuo Ogura², Tetsuji Yasuda², Tatsuro Maeda² (TUS¹, AIST²)

Keywords:GaSb,,MOS,Al2O3