[18p-E1-1~14] Developments and Challenges for Resistance Change Memories Technology

▲ [18p-E1-5] Atomic switch: Resistance change memory based on cation transport and redox reactions in oxide thin layers

^○Tohru Tsuruoka^1,2, Tsuyoshi Hasegawa^1,2, Kazuya Terabe¹, Masakazu Aono¹ (NIMS¹, JST-CREST²)

Keywords:原子スイッチ,金属酸化物,高分子電解質