[18p-E1-1~14] Developments and Challenges for Resistance Change Memories Technology (抵抗変化メモリ技術の発展及び課題）

▲ [18p-E1-6] 0.3V Programmable Logic using Complementary Atom Switch

MakotoMiyamura，ToshitsuguSakamoto，^○MunehiroTada，NaokiBanno，KoichiroOkamoto，NoriyukiIguchi，HiromitsuHada (LEAP)

キーワード：semiconductor