The 61st JSAP Spring Meeting, 2014

Presentation information

Print

Symposium

Symposium planned by Program Committee » Developments and Challenges for Resistance Change Memories Technology

[18p-E1-1~14] Developments and Challenges for Resistance Change Memories Technology

Tue. Mar 18, 2014 1:15 PM - 6:30 PM E1 (E101)

4:45 PM - 5:00 PM

▲ [18p-E1-8] Tantalum Oxide Resistance Change Memory Formed by Neutral Beam Technique

○Takeo Ohno1,2, Seiji Samukawa1,3 (WPI-AIMR, Tohoku Univ.1, JST-PRESTO2, IFS, Tohoku Univ.3)

Keywords:ReRAM,resistive memory