[18p-E1-1~14] Developments and Challenges for Resistance Change Memories Technology (抵抗変化メモリ技術の発展及び課題）

▲ [18p-E1-8] Tantalum Oxide Resistance Change Memory Formed by Neutral Beam Technique

^○Takeo Ohno^1,2，Seiji Samukawa^1,3 (WPI-AIMR, Tohoku Univ.¹，JST-PRESTO²，IFS, Tohoku Univ.³)

キーワード：ReRAM,resistive memory