The 61st JSAP Spring Meeting, 2014

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

[18p-E11-1~14] 14.4 Optical properties and light-emitting devices

Tue. Mar 18, 2014 1:15 PM - 5:00 PM E11 (E205)

4:30 PM - 4:45 PM

[18p-E11-13] Local structural analysis on Eu ions in Eu,O co-doped GaN by fluorescence XAFS

○Hironori Ofuchi1, Dong-gun Lee2, Masaaki Matsuda2, Ryuta Wakamatsu2, Wanxin Zhu2, Atsushi Koizumi2, Tetsuo Honma1, Yasufumi Fujiwara2 (JASRI/SPring-81, Osaka Univ.2)

Keywords:XAFS,ユーロピウム,希土類